TM TM TrenchT2 GigaMOS V = 75V MMIX1F520N075T2 DSS TM HiperFET I = 500A D25 Power MOSFET R 1.6m DS(on) (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab V T = 25 C to 175 C 75 V DSS J D V T = 25 C to 175 C, R = 1M 75 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM S I T = 25 C 500 A D25 C I T = 25 C, Pulse Width Limited by T 1700 A DM C JM G I T = 25 C 200 A A C G = Gate D = Drain E T = 25 C3J AS C S = Source P T = 25 C 830 W D C T -55 ... +175 C J Features T 175 C JM T -55 ... +175 C stg Silicon Chip on Direct-Copper Bond (DCB) Substrate T Maximum Lead Temperature for Soldering 300 C L Isolated Substrate T Plastic Body for 10s 260 C SOLD - Excellent Thermal Transfer V 50/60 Hz, 1 Minute 2500 V~ ISOL - Increased Temperature and Power Cycling Capability F Mounting Force 50..200 / 11..45 N/lb. C - High Isolation Voltage (2500V~) Weight 8 g 175C Operating Temperature Very High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Very Low R DS(on) Symbol Test Conditions Characteristic Values Advantages (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 3mA 75 V DSS GS D Space Savings V V = V , I = 8mA 2.5 5.0 V GS(th) DS GS D High Power Density I V = 20V, V = 0V 200 nA GSS GS DS Applications I V = V , V = 0V 25 A DSS DS DSS GS T = 150C 2.0 mA DC-DC Converters and Off-Line UPS J Primary-Side Switch R V = 10V, I = 100A, Note 1 1.6 m DS(on) GS D High Speed Power Switching Applications 2015 IXYS CORPORATION, All Rights Reserved DS100269B(12/15)MMIX1F520N075T2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 95 155 S fs DS D C 41 nF iss C V = 0V, V = 25V, f = 1MHz 4150 pF oss GS DS C 530 pF rss R Gate Input Resistance 1.36 GI t 48 ns d(on) Resistive Switching Times t 36 ns r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 80 ns d(off) R = 1 (External) G t 35 ns f Q 545 nC g(on) Q V = 10V, V = 0.5 V , I = 260A 177 nC gs GS DS DSS D Q 135 nC gd R 0.18 C/W thJC R 0.05 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 520 A S GS I Repetitive, Pulse Width Limited by T 1600 A SM JM V I = 100A, V = 0V, Note 1 1.25 V SD F GS t 150 ns I = 150A, V = 0V rr F GS I 7 A RM -di/dt = 100A/ s Q 357 nC RM V = 37.5V R Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537