V = 1500V 1500V MOS Gated MMJX1H40N150 DM Thyristor A A G Ks (Electrically Isolated Tab) Ks K G K Isolated Tab Symbol Test Conditions Maximum Ratings A V T = 25C to 150C 1500 V DM J V Continuous 30 V GK V Transient 40 V GK K I T = 25C, 1s 15.5 kA TSM C Ks T = 25C, 10s 6.4 kA C G P T = 25C 320 W D C T -55 ... +150 C J G = Gate K = Cathode T 150 C JM A = Anode Ks = Cathode Sense T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10s 260 C SOLD V 50/60Hz, 1 minute 2500 V~ ISOL F Mounting Force 50..200/11..45 N/lb Features C Weight 5 g Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Very High Current Capability Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Advantages V I = 250 A, V = 0V 1500 V BR A GK High Power Density V I = 250A, V = V 2.5 5.0 V Low Gate Drive Requirement GK(th) A AK GK V I = 1000A, V = 15V 4.75 6.0 V T T GK r I > I , V = 15V 1.20 m Applications T T L GK V V = 15V 5.25 V BO GK Capacitive Discharge Circuits Ignition Circuits I V = 1500V, V = 0V 15 A D AK GK Solid State Surge Protection T = 125C 1.5 mA J I 250 A L I 200 A H I V = 0V, V = 30V 200 nA GKS AK GK 2017 IXYS CORPORATION, All Rights Reserved DS100594C(12/17)MMJX1H40N150 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J C 2825 pF iks C V = 25V, V = 0V, f = 1MHz 164 pF AK GK oks C 50 pF rks Q 99 nC g(on) Q I = 40A, V = 15V, V = 600V 22 nC gk C GK AK Q 36 nC ga t 100 ns Capacitive Discharge, T = 25C ri J I = 2000A, V = 15V, R = 1 A GK G t 50 ns d V = 1000V, L < 20nH, Notes 2 & 3 AK Capacitive Discharge, T = 125C t 100 ns J ri I = 2000A, V = 15V, R = 1 A GK G t 50 ns V = 1000V, L < 20nH, Notes 2 & 3 d AK R 0.39 C/W thJC R 0.12 C/W thCS R 30 C/W thJA Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. It is recommended to use a gate driver capable of supplying more than 4Amps and >15V gate voltage. 3. Refer to fig. 8 & 9. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537