MUBW 100-06 A8 Converter - Brake - Inverter Module (CBI3) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 23 4 6 5 T7 T2 T4 T6 E72873 D2 D4 D6 D14 D16 D12 See outline drawing for pin arrangement 11 14 12 13 10 23 24 8 Preliminary data NTC 9 Three Phase Brake Chopper Three Phase Rectifier Inverter V = 1600 V V = 600 V V = 600 V RRM CES CES I = 90 A I = 50 A I = 125 A FAVM C25 C25 I = 850 A V = 1.9 V V = 1.9 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or asynchronous motor V 1600 V RRM electric braking operation I T = 80C sine 180 65 A FAV C Features I T = 80C rectangular d = 1/3 bridge 180 A DAVM C I T = 25C t = 10 ms sine 50 Hz 850 A FSM VJ High level of integration - only one power semiconductor module required for the P T = 25C 170 W tot C whole drive NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit Symbol Conditions Characteristic Values ruggedness (T = 25C, unless otherwise specified) VJ Epitaxial free wheeling diodes with min. typ. max. Hiperfast and soft reverse recovery Industry standard package with insulated V I = 100 A T = 25C 1.3 1.5 V VJ F F copper base plate and soldering pins for T = 125C 1.3 V VJ PCB mounting I V = V T = 25C 0.05 mA VJ R R RRM Temperature sense included T = 125C 1 mA VJ R (per diode) 0.73 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2007 IXYS All rights reserved 1 - 4 PHASE-OUT 20070912aMUBW 100-06 A8 Output Inverter T1 - T6 Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings Conduction V T = 25C to 150C 600 V CES VJ V Continuous 20 V GES I T = 25C 125 A C25 C I T = 80C 85 A C80 C IGBT (typ. at V = 15 V T = 125C) GE J RBSOA V = 15 V R = 2.2 T = 125C I = 200 A GE VJ CM G T1-T6 Clamped inductive load L = 100 H V V CEK CES V = 1.05 V R = 11.5 m 0 0 T7 t V = V V = 15 V R = 2.2 T = 125C 10 s GE VJ SC CE CES G V = 1.05 V R = 21.5 m 0 0 (SCSOA) non-repetitive P T = 25C 410 W tot C Diode (typ. at T = 125C) J D1-D6 V = 1.15 V R = 2.5 m 0 0 Symbol Conditions Characteristic Values D7 (T = 25C, unless otherwise specified) V = 1.15 V R = 12.5 m 0 0 VJ min. typ. max. D11-D16 V = 0.85 V R = 4 m 0 0 V I = 100 A V = 15 V T = 25C 1.9 2.5 V VJ CE(sat) C GE T = 125C 2.2 V VJ Thermal Response V I = 1.5 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 1.4 mA VJ CES CE CES GE T = 125C 1.5 mA VJ I V = 0 V V = 20 V 400 nA GES CE GE t 25 ns d(on) t 11 ns r Inductive load, T = 125C VJ t 150 ns d(off) IGBT (typ.) V = 300 V I = 100 A CE C t 30 ns T1-T6 f V = 15 V R = 2.2 GE G E 1.0 mJ C = 0.232 J/K R = 0.223 K/W th1 th1 on C = 1.504 J/K R = 0.077 K/W E 2.9 mJ th2 th2 off T7 C V = 25 V V = 0 V f = 1 MHz 4.3 nF C = 0.123 J/K R = 0.419 K/W th1 th1 ies CE GE C = 0.944 J/K R = 0.131 K/W Q V = 300V V = 15 V I = 125 A 340 nC th2 th2 Gon CE GE C R (per IGBT) 0.3 K/W Diode (typ.) thJC D1-D6 C = 0.138 J/K R = 0.48 K/W th1 th1 C = 0.957 J/K R = 0.13 K/W th2 th2 Output Inverter D1 - D6 D7 C = 0.038 J/K R = 1.74 K/W th1 th1 C = 0.435 J/K R = 0.36 K/W Symbol Conditions Maximum Ratings th2 th2 D11-D16 I T = 25C 140 A C = 0.112 J/K R = 0.568 K/W F25 C th1 th1 C = 0.745 J/K R = 0.162 K/W I T = 80C 85 A th2 th2 F80 C Symbol Conditions Characteristic Values min. typ. max. V I = 100 A V = 0 V T = 25C 1.9 2.2 V VJ F F GE T = 125C 1.4 V VJ I I = 60 A di /dt = -500 A/s T = 125C 28 A VJ RM F F t V = 300 V V = 0 V 100 ns rr R GE R (per diode) 0.61 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 2007 IXYS All rights reserved 2 - 4 PHASE-OUT 20070912a