MUBW 35-12 A8 Converter - Brake - Inverter Module (CBI3) 21 22 T1 D1 T5 D7 T3 D5 D3 D11 D13 D15 16 20 18 7 15 19 17 1 23 4 6 5 T7 T2 T4 T6 D2 D4 D6 E72873 D14 D16 D12 See outline drawing for pin arrangement 11 14 12 13 10 23 24 8 NTC 9 Three Phase Brake Chopper Three Phase Rectifier Inverter V = 1600 V V = 1200 V V = 1200 V RRM CES CES I = 42 A I = 35 A I = 50 A FAVM C25 C25 I = 300 A V = 2.3 V V = 2.5 V FSM CE(sat) CE(sat) Application: AC motor drives with Input Rectifier D11 - D16 Input from single or three phase grid Symbol Conditions Maximum Ratings Three phase synchronous or asynchronous motor V 1600 V RRM electric braking operation I T = 80C sine 180 30 A FAV C Features I T = 80C rectangular d = 1/3 bridge 80 A DAVM C I T = 25C t = 10 ms sine 50 Hz 300 A FSM VJ High level of integration - only one power semiconductor module required for the P T = 25C 100 W tot C whole drive NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Symbol Conditions Characteristic Values Epitaxial free wheeling diodes with (T = 25C, unless otherwise specified) VJ Hiperfast and soft reverse recovery min. typ. max. Industry standard package with insulated copper base plate and soldering pins for V I = 35 A T = 25C 1.2 1.4 V VJ F F PCB mounting T = 125C 1.2 V VJ Temperature sense included I V = V T = 25C 0.02 mA VJ R R RRM T = 125C 0.4 mA VJ R (per diode) 1.3 K/W thJC IXYS reserves the right to change limits, test conditions and dimensions. 20070912a 2007 IXYS All rights reserved 1 - 8MUBW 35-12 A8 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings V T = 25C to 150C 1200 V CES VJ V Continuous 20 V GES I T = 25C 50 A C25 C I T = 80C 35 A C80 C RBSOA V = 15 V R = 47 T = 125C I = 70 A GE VJ CM G Clamped inductive load L = 100 H V V CEK CES t V = V V = 15 V R = 47 T = 125C 10 s GE VJ SC CE CES G (SCSOA) non-repetitive P T = 25C 225 W tot C Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) VJ min. typ. max. V I = 35 A V = 15 V T = 25C 2.5 3.1 V VJ CE(sat) C GE T = 125C 2.9 V VJ V I = 1 mA V = V 4.5 6.5 V GE(th) C GE CE I V = V V = 0 V T = 25C 1.1 mA VJ CES CE CES GE T = 125C 1.0 mA VJ I V = 0 V V = 20 V 200 nA GES CE GE t 100 ns d(on) t 70 ns r Inductive load, T = 125C VJ t 500 ns d(off) V = 600 V I = 35 A CE C t 70 ns f V = 15 V R = 47 GE G E 5.3 mJ on E 3.9 mJ off C V = 25 V V = 0 V f = 1 MHz 1.65 nF ies CE GE Q V = 600 V V = 15 V I = 35 A 120 nC Gon CE GE C R (per IGBT) 0.55 K/W thJC Output Inverter D1 - D6 Symbol Conditions Maximum Ratings I T = 25C 50 A F25 C I T = 80C 35 A F80 C Symbol Conditions Characteristic Values min. typ. max. V I = 35 A V = 0 V T = 25C 2.4 2.8 V VJ F F GE T = 125C 1.8 V VJ I I = 30 A di /dt = -500 A/s T = 125C 27 A VJ RM F F t V = 600 V V = 0 V 150 ns rr R GE R (per diode) 1.19 K/W thJC 20070912a 2007 IXYS All rights reserved 2 - 8