N1718NC180 IXYS

N1718NC180 electronic component of IXYS
N1718NC180 IXYS
N1718NC180 SCRs
N1718NC180  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of N1718NC180 SCRs across the USA, India, Europe, Australia, and various other global locations. N1718NC180 SCRs are a product manufactured by IXYS. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. N1718NC180
Manufacturer: IXYS
Category: SCRs
Description: SCRs Phase Control Thyristor
Datasheet: N1718NC180 Datasheet (PDF)
Price (USD)
1: USD 253.385 ea
Line Total: USD 253.38 
Availability : 19
  
Ship by Thu. 07 Aug to Mon. 11 Aug
QtyUnit Price
1$ 253.385
12$ 215.952

Availability 19
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 253.385
12$ 215.952

   
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RoHS - XON
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We are delighted to provide the N1718NC180 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the N1718NC180 and other electronic components in the SCRs category and beyond.

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nd Date:- 2 April, 2014 Data Sheet Issue:- 4 Phase Control Thyristor Types N1718NC120 to N1718NC200 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 1200-2000 V DRM V Non-repetitive peak off-state voltage, (note 1) 1200-2000 V DSM V Repetitive peak reverse voltage, (note 1) 1200-2000 V RRM V Non-repetitive peak reverse voltage, (note 1) 1300-2100 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS I Maximum average on-state current, T =55C, (note 2) T(AV)M sink 1718 A I Maximum average on-state current. T =85C, (note 2) T(AV)M sink 1143 A I Maximum average on-state current. T =85C, (note 3) T(AV)M sink 663 A I Nominal RMS on-state current, T =25C, (note 2) T(RMS)M sink 3450 A I D.C. on-state current, T =25C, (note 4) T(d.c.) sink 2852 A I Peak non-repetitive surge t =10ms, V =0.6V , (note 5) 27.2 kA TSM p rm RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 29.9 kA TSM2 p rm 2 2 6 2 It I t capacity for fusing t =10ms, V =0.6V , (note 5) 3.7010 A s p rm RRM 2 6 2 2 I t I t capacity for fusing t =10ms, V 10V, (note 5) 4.4710 A s p rm Critical rate of rise of on-state current (repetitive), (Note 6) 500 A/s (di/dt) cr Critical rate of rise of on-state current (non-repetitive), (Note 6) 1000 A/s V Peak reverse gate voltage 5 V RGM P Mean forward gate power 4 W G(AV) P Peak forward gate power 30 W GM T Operating temperature range -40 to +125 C j op T Storage temperature range -40 to +150 C stg Notes:- 1) De-rating factor of 0.13% per C is applicable for T below 25C. j 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Single side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C T initial. j 6) V =67% V , I =2A, t 0.5s, T =125C. D DRM FG r case Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 1 of 11 April, 2014 Phase Control Thyristor Types N1718NC120 to N1718NC200 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS - - 1.41 I =2550A TM V Maximum peak on-state voltage V TM - - 1.85 I =5150A TM V Threshold voltage - - 0.979 V T0 r Slope resistance - - 0.169 m T (dv/dt) Critical rate of rise of off-state voltage 1000 - - V =80% V , linear ramp, gate o/c V/s cr D DRM I Peak off-state current - - 100 Rated V mA DRM DRM I Peak reverse current - - 100 Rated V mA RRM RRM V Gate trigger voltage - - 3.0 V GT T=25C V =10V, I =3A j D T I Gate trigger current - - 300 mA GT V Gate non-trigger voltage - - 0.25 Rated V V GD DRM I Holding current - - 1000 T=25C mA H j t Gate-controlled turn-on delay time - 0.6 1.5 s gd V =67% V , I =1500A, di/dt=10A/s, D DRM T I =2A, t =0.5s, T =25C FG r j t Turn-on time - 1.1 2.5 s gt Q Recovered charge - 2300 2550 C rr Q Recovered charge, 50% Chord - 1500 - C ra I =1000A, t =1000s, di/dt=10A/s, TM p V =50V r I Reverse recovery current - 123 - A rr t Reverse recovery time - 24 - s rr I =1000A, t =1000s, di/dt=10A/s, TM p - 100 - V =50V, V =80%V , dV /dt=20V/s r dr DRM dr t Turn-off time s q I =1000A, t =1000s, di/dt=10A/s, TM p - 170 - V =50V, V =80%V , dV /dt=200V/s r dr DRM dr - - 0.024 Double side cooled K/W R Thermal resistance, junction to heatsink thJK - - 0.048 Single side cooled K/W F Mounting force 19 - 26 kN WWeight - 510 - g t Notes:- 1) Unless otherwise indicated T =125C. j 2) For other clamp forces please consult factory. Data Sheet. Types N1718NC120 to N1718NC200 Issue 4 Page 2 of 11 April, 2014

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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