th Date: - 5 August, 2020 Data Sheet Issue: - A1 Phase Control Thyristor Types N4240EA480 and N4240EA520 Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Repetitive peak off-state voltage, (note 1) 4800-5200 V DRM V Non-repetitive peak off-state voltage, (note 1) 4800-5200 V DSM V Repetitive peak reverse voltage, (note 1) 4800-5200 V RRM V Non-repetitive peak reverse voltage, (note 1) 4900-5300 V RSM MAXIMUM OTHER RATINGS UNITS LIMITS IT(AV) Mean on-state current. Tsink=55C, (note 2) 4240 A IT(AV) Mean on-state current. Tsink=85C, (note 2) 3020 A IT(AV) Mean on-state current. Tsink=85C, (note 3) 1700 A IT(RMS) Nominal RMS on-state current. Tsink=25C, (note 2) 8200 A IT(d.c.) D.C. on-state current. Tsink=25C, (note 4) 7515 A I Peak non-repetitive surge t =10ms, V =0.6V , (note 5) 43.2 kA TSM p RM RRM I Peak non-repetitive surge t =10ms, V 10V, (note 5) 47.5 kA TSM2 p RM 2 2 6 2 I t I t capacity for fusing t =10ms, V =0.6V , (note 5) 9.3310 A s p RM RRM 2 2 6 2 I t I t capacity for fusing t =10ms, V 10V, (note 5) 10.2610 A s p RM Maximum rate of rise of on-state current (continuous), (Note 6) 75 A/s diT/dt Maximum rate of rise of on-state current (repetitive), (Note 6) 150 A/s Maximum rate of rise of on-state current (non-repetitive), (Note 6) 300 A/s V Peak reverse gate voltage 5 V RGM P Mean forward gate power 4 W G(AV) P Peak forward gate power 50 W GM V Non-trigger gate voltage, (Note 7) 0.25 V GD THS Operating temperature range -40 to +125 C Tstg Storage temperature range -40 to +150 C Notes: - 1) De-rating factor of 0.13% per C is applicable for Tj below 25C. 2) Double side cooled, single phase 50Hz, 180 half-sinewave. 3) Cathode side cooled, single phase 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125C Tj initial. 6) V =67% V , I =2A, t 0.5s, T =125C. D DRM FG r case 7) Rated V . DRM Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 1 of 12 August 2020 Phase Control Thyristor Types N4240EA480 and N4240EA520 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS VTM Maximum peak on-state voltage - - 2.50 ITM=6800A V V0 Threshold voltage - - 1.039 V r Slope resistance - - 0.216 s m dv/dt Critical rate of rise of off-state voltage 1000 - - VD=80% VDRM, Linear ramp, gate o/c V/s I Peak off-state current - - 200 Rated V mA DRM DRM I Peak reverse current - - 200 Rated V mA RRM RRM VGT Gate trigger voltage - - 3.0 V T =25C, V =10V, I =3A j D T IGT Gate trigger current - - 300 mA I Holding current - - 1000 T =25C mA H j tgd Gate controlled turn-on delay time - 2.2 3.0 IFG=2A, tr=0.5s, VD=60%VDRM, s I =2000A, di/dt=10A/s, T =25C TM j tgt Turn-on time - 2.8 5.0 Q Recovered Charge - 14 19 mC rr Q Recovered Charge, 50% chord - 9.8 - mC ra ITM=4000A, tp=2000s, di/dt=10A/s, V =100V r I Reverse recovery current - 320 - A rm t Reverse recovery time, 50% chord - 60 - s rr ITM=4000A, tp=2000s, di/dt=10A/s, - 950 - V =100V, V =80%V , dV /dt=20V/s r dr DRM dr (Note 2) t Turn-off time s q ITM=4000A, tp=2000s, di/dt=10A/s, - 1500 - V =100V, V =80%V , dV /dt=200V/s r dr DRM dr (Note 2) - - 0.005 Double side cooled K/W R Thermal resistance, junction to heatsink - - 0.012 Cathode side cooled K/W thJK - - 0.009 Anode side cooled K/W F Mounting force 76 - 93 (Note 3) kN W Weight - 1.6 - kg t Notes: - 1) Unless otherwise stated Tj=125C. 2) Standard test condition for tq dV /dt=200V/s. For other dV /dt values please consult factory. dr dr 3) For other clamp forces please consult factory. Data Sheet. Types N4240EA480 and N4240EA520 Issue A1. Page 2 of 12 August 2020