VBO36-12NO8 IXYS

VBO36-12NO8 electronic component of IXYS
VBO36-12NO8 IXYS
VBO36-12NO8 Bridge Rectifiers
VBO36-12NO8  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VBO36-12NO8 Bridge Rectifiers across the USA, India, Europe, Australia, and various other global locations. VBO36-12NO8 Bridge Rectifiers are a product manufactured by IXYS. We provide cost-effective solutions for Bridge Rectifiers, ensuring timely deliveries around the world.

Part No. VBO36-12NO8
Manufacturer: IXYS
Category: Bridge Rectifiers
Description: IXYS Bridge Rectifiers 36 Amps 1200V
Datasheet: VBO36-12NO8 Datasheet (PDF)
Price (USD)
1: USD 16.156 ea
Line Total: USD 16.16 
Availability : 30
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 16.156
2$ 14.098
4$ 13.328
10$ 12.81

Availability 30
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 16.156
2$ 14.098
4$ 13.328
10$ 12.81

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Vf - Forward Voltage
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We are delighted to provide the VBO36-12NO8 from our Bridge Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBO36-12NO8 and other electronic components in the Bridge Rectifiers category and beyond.

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VBO 36 I = 30 A dAV Three Phase Rectifier Bridge V = 800-1800 V RRM + - V V Type RSM RRM ~ V V DSM DRM V V ~ 800 800 VBO 36-08NO8 ~ 1200 1200 VBO 36-12NO8 1400 1400 VBO 36-14NO8 ~ + - 1600 1600 VBO 36-16NO8 1800 1800 VBO 36-18NO8 Features Symbol Conditions Maximum Ratings Package with fast-on terminals I T = 85C, module 25 A dAV C Isolation voltage 3000 V~ I T = 62C, module 30 A dAVM C Planar passivated chips I T = 45C t = 0 ms (50 Hz) 550 A FSM VJ Blocking voltage up to 800 V V = 0 t = 8.3 ms (60 Hz) 600 A R Low forward voltage drop UL registered E 72873 T = T t = 0 ms (50 Hz) 500 A VJ VJM V = 0 t = 8.3 ms (60 Hz) 550 A R Applications 2 2 I t T = 45C t = 0 ms (50 Hz) 520 A s VJ 2 V = 0 t = 8.3 ms (60 Hz) 520 A s Supplies for DC power equipment R Input rectifiers for PWM inverter 2 T = T t = 0 ms (50 Hz) 250 A s VJ VJM Battery DC power supplies 2 V = 0 t = 8.3 ms (60 Hz) 250 A s R Field supply for DC motors T -40...+ 50 C VJ T 50 C VJM Advantages T -40...+ 50 C stg Easy to mount with one screw V 50/60 Hz, RMS t = min 2500 V~ ISOL Space and weight savings I < mA t = s 3000 V~ ISOL Improved temperature & power cycling M Mounting torque (M5) 2 0% Nm d ( 0-32 UNF) 8 0% lb.in. Dimensions in mm (1 mm = 0.0394) Weight Typ. 22 g 6.3 x 0.8 Symbol Conditions Characteristic Values I V = V T = 25C 0.3 mA R R RRM VJ T = T 2.0 mA VJ VJM V I = 50 A T = 25C .7 V F F VJ V For power-loss calculations only 0.8 V T0 r 5.8 mW t R per diode 20 el. 6.20 K/W thJC per module .55 K/W D E R per diode 20 el. 7.40 K/W thCH per module .85 K/W d Creeping distance on surface 2.7 mm S d Creepage distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s B A Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20070807 IXYS All rights reserved - 2T C C VBO 36 4 1.9 200 10 1.8 I A FSM T = 45C T = 150C VJ VJ 480 500 1.6 150 1.4 1.2 100 3 10 45C 150C 1.0 0 V RRM 50 0.8 V RRM 150C 0.6 1 V 25C RRM 0 2 10 0.4 0.5 1 1.5 2 2.5 0 1 2 3 1 2 4 6 10 10 10 10 10 V V t ms t ms F 2 Fig. Forward current versus Fig. 2 Surge overload current per diode Fig. 3 I t versus time ( - 0 ms) voltage drop per diode I : crest value, t: duration per diode or thyristor FSM 70 50 50 DC 0.36 = R K/W thCA 65 60 sin. 180 0.71 40 rec. 120 rec. 60 50 75 rec. 30 1.43 30 40 90 105 30 2.86 20 DC sin. 180 120 20 rec. 120 rec. 60 7.14 10 rec. 30 135 10 0 150 0 50 100 150 200 10 20 0 50 100 150 T C I A T K C FAVM amb Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Maximum forward current at case temperature 8 Z thJK 6 Z thJC 4 2 0 0.01 0.1 1 10 100 t s Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. 20070807 IXYS All rights reserved 2 - 2 P W I A Z K/W tot th F I / I F(OV) FSM 2 I A A s dAV

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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