VVZ 24 I = 27 A Three Phase Half Controlled dAVM V = 1200-1600 V RRM Rectifier Bridge 4 3 3 2 61 1 V V Type RSM RRM 2 V V DSM DRM 8 7 VV 6 5 5 1300 1200 VVZ 24-12io1 7 1500 1400 VVZ 24-14io1 4 1700 1600 VVZ 24-16io1 8 Symbol Conditions Maximum Ratings Features Package with DCB ceramic base plate I T = 100C module 21 A dAV K Isolation voltage 3600 V~ I module 27 A dAVM Planar passivated chips I , I per leg 16 A FRMS TRMS Soldering terminals I , I T = 45C t = 10 ms (50 Hz), sine 300 A FSM TSM VJ UL registered E 72873 V = 0 t = 8.3 ms (60 Hz), sine 320 A R T = T t = 10 ms (50 Hz), sine 270 A Applications VJ VJM V = 0 t = 8.3 ms (60 Hz), sine 290 A R Input rectifier for switch mode power 2 2 supplies (SMPS) I t T = 45C t = 10 ms (50 Hz), sine 450 A s VJ 2 Softstart capacitor charging V = 0 t = 8.3 ms (60 Hz), sine 430 A s R Electric drives and auxiliaries 2 T = T t = 10 ms (50 Hz), sine 365 A s VJ VJM 2 V = 0 t = 8.3 ms (60 Hz), sine 350 A s R Advantages (di/dt) T = T repetitive, I = 50 A 150 A/s cr VJ VJM T Easy to mount with two screws f =400 Hz, t =200 s P Space and weight savings V = 2/3 V D DRM Improved temperature and power I = 0.3 A, non repetitive, I = 1/3 I 500 A/s G T dAV cycling di /dt = 0.3 A/s G (dv/dt) T = T V = 2/3 V 1000 V/s cr VJ VJM DR DRM R = method 1 (linear voltage rise) GK V 10 V RGM P T = T t =30 s 10 W GM VJ VJM p I = I t = 500 s 5W T TAVM p t =10 ms 1W p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5 Nm d (10-32 UNF) 18-22 lb.in. Weight typ. 28 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. 20080527b 2008 IXYS All rights reserved 1 - 3VVZ 24 Symbol Conditions Characteristic Values I , I V = V V = V T = T 5mA R D R RRM D DRM VJ VJM T = 25C 0.3 mA VJ V , V I , I = 30 A, T = 25C 1.45 V F T F T VJ V For power-loss calculations only 1 V T0 r (T = 125C) 16 m T VJ V V = 6 V T = 25C 1.0 V GT D VJ T = -40C 1.2 V VJ I V = 6 V T = 25C 65 mA GT D VJ T = -40C 80 mA VJ T = 125C 50 mA VJ V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM I T = T V = 2/3 V 5mA GD VJ VJM D DRM I I = 0.3 A t = 30 sT = 25C 150 mA L G G VJ di /dt = 0.3 A/sT = -40C 200 mA G VJ T = 125C 100 mA VJ I T = 25C V = 6 V R = 100 mA H VJ D GK t T = 25C V = 1/2 V 2 s gd VJ D DRM I = 0.3 A di /dt = 0.3 A/s G G t T = 125C I = 15 A, t = 300 s, -di/dt = 10 A/s typ. 150 s q VJ T p Q V = 100 V, dv/dt = 20 V/s, V = 2/3 V 75 C r R D DRM R per thyristor (diode) DC current 2.1 K/W thJC per module 0.35 K/W R per thyristor (diode) DC current 2.7 K/W thJH per module 0.45 K/W d Creeping distance on surface 7 mm S d Creepage distance in air 7 mm A 2 a Max. allowable acceleration 50 m/s Dimensions in mm (1 mm = 0.0394 ) IXYS reserves the right to change limits, test conditions and dimensions. 20080527b 2008 IXYS All rights reserved 2 - 3