VW 2x45 AC Controller Modules I = 2x 45 A RMS V = 1200-1600 V RRM 12 5 4 5 4 V V Type RSM RRM 2 1 V V DSM DRM VV 1200 1200 VW2x45-12io1 1400 1400 VW2x45-14io1 10 9 76 9 10 1600 1600 VW2x45-16io1 7 6 Symbol Conditions Maximum Ratings Features Thyristor controller for AC (circuit W2C I T = 85C (per phase) 45 A RMS C acc. to IEC) for mains frequency I T = T 32 A TRMS VJ VJM Soldering connections for PCB I T = 85C (180 sine per thyristor) 20 A TAVM C mounting I T = 45C t = 10 ms (50 Hz), sine 300 A TSM VJ Isolation voltage 3600 V~ V = 0 t = 8.3 ms (60 Hz), sine 320 A R Planar passivated chips T = T t = 10 ms (50 Hz), sine 270 A VJ VJM UL applied V = 0 t = 8.3 ms (60 Hz), sine 290 A R 2 2 Applications I t T = 45C t = 10 ms (50 Hz), sine 450 A s VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 430 A s l R Switching and control of 2 three phase AC circuits T = T t = 10 ms (50 Hz), sine 360 A s VJ VJM 2 Softstart AC motor controller V = 0 t = 8.3 ms (60 Hz), sine 350 A s R Solid state switches (di/dt) T = T repetitive, I = 45 A 100 A/s cr VJ VJM T Light and temperature control f =50 Hz, t =200 s P 2 V = / V D 3 DRM Advantages I = 0.45 A non repetitive, I = I 500 A/s G T TAVM di /dt = 0.45 A/s Easy to mount with two screws G Space and weight savings 2 (dv/dt) T = T V = / V 1000 V/s cr VJ VJM DR 3 DRM l Improved temperature and power G R = method 1 (linear voltage rise) GK cycling P T = T t = 30 s 10 W GM VJ VJM p I = I t = 300 s 5 W T TAVM p P 0.5 W GAVM V 10 V RGM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I < 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5/18-22 Nm/lb.in. d Recommended replacement: Weight typ. 35 g VW2x60-12/14/16 io1 Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions 20080828a 2008 IXYS All rights reserved 1 - 3 p h a s e - o u tVW 2x45 Symbol Conditions Characteristic Values 10 1: I , T = 125C GT VJ I , I T = T V = V V = V <5mA D R VJ VJM R RRM D DRM 2: I , T = 25C GT VJ V 3: I , T = -40C GT VJ V I = 45 A T = 25C < 1.52 V T T VJ V G V For power-loss calculations only 0.85 V T0 r 15 m T 3 V V = 6 V T = 25C < 1.5 V GT D VJ 2 6 1 5 T = -40C < 1.6 V VJ 1 I V = 6 V T = 25C < 100 mA GT D VJ 4 T = -40C < 200 mA VJ 2 V T = T V = / V < 0.2 V GD VJ VJM D 3 DRM I <5mA GD 4: P = 0.5 W GAV 5: P = 5 W GM I T = 25C t = 10 s < 450 mA L VJ P I , T = 125C 6: P = 10 W GD VJ GM I = 0.45 A di /dt = 0.45 A/s G G 0.1 1 10 100 1000 mA I T = 25C V = 6 V R = < 200 mA I H VJ D GK G t T = 25C V = V <2s Fig. 1 Gate trigger characteristics gd VJ D DRM I = 0.45 A di /dt = 0.45 A/s G G t T = T I = 20 A, t = 200 s di/dt = -10 A/s typ. 150 s 1000 q VJ VJM T P 2 V = 100 V dv/dt = 15 V/s V = / V T = 25C VJ R D 3 DRM R per thyristor DC 1.25 K/W s thJC per module 0.31 K/W t gd R per thyristor DC 1.55 K/W thJK typ. Limit 100 per module 0.39 K/W d Creeping distance on surface 12.7 mm S d Creepage distance in air 9.4 mm A 2 a Max. allowable acceleration 50 m/s 10 1 10 100 mA 1000 I G Dimensions in mm (1 mm = 0.0394 ) Fig. 2 Gate trigger delay time G 60 200 T = 125C VJ A A T = 85C 175 K 50 I I RMS F 150 40 125 30 100 75 20 50 T =125C VJ T = 25C VJ 10 25 VW2x45 0 0 0.0 0.5 1.0 1.5 V 2.0 0.01 0.1 1 s 10 V t T Fig. 4 Rated RMS current vs. time Fig. 3 Forward current vs. (360 conduction) voltage drop per leg IXYS reserves the right to change limits, test conditions and dimensions 20080828a 2008 IXYS All rights reserved 2 - 3 p h a s e - o u t