Product Information

SD103AWS

Product Image X-ON

Datasheet
Schottky Barrier Diodes (SBD) SOD-323 RoHS
Manufacturer: Jingdao



Price (USD)

50: USD 0.0187 ea
Line Total: USD 0.935

97050 - Global Stock
Ships to you between
Fri. 07 Apr to Wed. 12 Apr
MOQ: 50 Multiples:50
Pack Size :   50
Availability Price Quantity
200938 - Global Stock


Ships to you between
Fri. 07 Apr to Wed. 12 Apr

MOQ : 50
Multiples : 1

Stock Image

SD103AWS
Jingdao

50 : USD 0.0194
500 : USD 0.0157
3000 : USD 0.0129
6000 : USD 0.0104
24000 : USD 0.0094
51000 : USD 0.009

     
Manufacturer
Jingdao
Product Category
Schottky Diodes & Rectifiers
Brand
Jingdao
Rohs
Y
Package
SOD - 323
Voltage - Dc Reverse Vr Max
40 V
Voltage - Forward Vf Max @ If
600 mV @ 200 mA
Reverse Voltage Vr
40 V
Forward Voltage Vf@If
600 mV @200 mA
Average Rectified Current Io
-
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Jingdao Microelectronics co.LTD SD103AWS THRU SD103CWS Schottky Barrier Diode FEATURES PINNING Low Forward Voltage Drop PIN DESCRIPTION 1 Cathode Guard Ring Construction for Transient Protection 2 Anode Negligible Reverse Recovery Time Low Capacitance 2 MECHANICAL DATA 1 Case: SOD-323 Top View Terminals: Solderable per MIL-STD-750, Method 2026 Simplified outline SOD-323 and symbol Approx. Weight: 5.48mg / 0.00019oz Maximum Ratings and Electrical characteristics Ratings at 25 C ambient temperature unless otherwise specified. Symbols SD103AWS SD103BWS SD103CWS Parameter Units Peak Repetitive Reverse Voltage V 40 30 20 V RRM RMS reverse voltage V RMS 28 21 14 V Working Peak Reverse Voltage V 40 30 20 V DC Peak Forward Surge Current, 8.3ms single half I 13 FSM A sine-wave superimposed on rated load (JEDEC method) IF=20mA 0.37 Maximum Instantaneous Forward Voltage V F V IF=200mA 0.60 Power Dissipation 200 mW PD 5 SD103AWS,VR=30V I 5 Reverse current SD103BWS,VR=20V R uA 5 SD103CWS,VR=10V Thermal Resistance, Junction to Ambient Air R 300 C/W JA SD103AW 40 Reverse voltage SD103BW V(BR)R 30 IR=100uA V 20 SD103CW Reverse recovery time IF=IR=200mA,Irr=0.1xIR,RL=100 trr ns 10 FM Forward Continuons Current I 350 mA VR=0V.f=1MHZ pF Total capacitance Ctot 50 Junction temperature T 125 j Storage temperature T stg -55 ~ +150 Page 1 of 3 2018.06 SOD323-S-SD103AWS~SD103CWS-0.2A40V Jingdao Microelectronics co.LTD SD103AWS THRU SD103CWS Fig.1 Power Derating Curve Fig.2 Typical Reverse Characteristics 600 1000 500 T =100C J 100 400 300 10 200 1 TJ=25C 100 0 0.1 25 50 75 100 125 150 0 10 20 30 40 50 TA,Ambient Temperature (C) Reverse Voltagev Fig.4 Maximum Non-Repetitive Peak Fig.3 Forward Characteristics Forward Surage Current 18 1000 8.3 ms Single Half Sine Wave (JEDEC Method) 15 12 T =100C J 100 09 TJ=25C 06 10 03 0.1 00 1 10 100 1000 0 200 400 600 800 Number of Cycles at 50Hz FORWARD VOLTAGE VF(mV) Fig.5 Typical Junction Capacitance Fig.6 Typical Transient Thermal Impedance 100 2000 TJ=25C f=1MHz 1000 10 100 1 10 0 1 10 20 0.01 0.1 1 10 100 Reverse Voltage (V) t, Pulse Durationsec www.sdjingdao.com Page 2 of 3 2018.06 FORWARD CURRENT IF(mA) Junction Capacitance (pF) Power Dissipation (mW) Transient Thermal ImpedanceC/W Peak Forward Surage Current (A) Instaneous Reverse Current ( A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Shandong Jingdao Microelectronics