Product Information

UM10B

Product Image X-ON

Datasheet
Bridge Rectifiers UMB-4 RoHS

Manufacturer: Jingdao
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.025 ea
Line Total: USD 0.5

3300 - Global Stock
Ships to you between
Fri. 23 Jun to Wed. 28 Jun
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
30500 - Global Stock


Ships to you between
Fri. 23 Jun to Wed. 28 Jun

MOQ : 20
Multiples : 20

Stock Image

UM10B
Jingdao

20 : USD 0.0257
200 : USD 0.0204
600 : USD 0.0175
5000 : USD 0.0151
10000 : USD 0.0135
20000 : USD 0.0127

     
Manufacturer
Jingdao
Product Category
Bridge Rectifiers
Package / Case
UMB - 4
Category
Bridge Rectifiers
Rohs
y
Brand
Jingdao
Peak Forward Surge Current
25 A
Reverse Leakage Current Ir
5 uA @1kV
Forward Voltage Vf@If
1.1 V @800 mA
Average Rectified Current Io
800 mA
Reverse Voltage Vr
1 kV
Operating Temperature
- 55 C ~ + 150 C @ (Tj)
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Jingdao Microelectronics UM1B THRU UM10B 0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER FEATURES: PINNING Glass Passivated Chip Junction PIN DESCRIPTION Reverse Voltage - 100 to 1000 V Input Pin~ 1 Average Rectified Output Current- 0.8 A Input Pin~ 2 3 Output Anode+ High Surge Current Capability 4 Output Cathode- Designed for Surface Mount Application MECHANICAL DATA 3 Case: UMB 4 2 1 Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 68mg 0.0022oz UMB Package Maximum Ratings and Electrical characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols UM1B UM2B UM4B UM6B UM8B UM10B Parameter Units Maximum Repetitive Peak Reverse Voltage 400 600 1000 V 100 200 800 V RRM Maximum RMS voltage V 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 600 DC 100 200 400 800 1000 V Average Rectified Output Current A I O 0.8 at Ta = 40 C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load I FSM 25 A (JEDEC Method) I = 0.4A 1.0 F Forward Voltage per element V V F I =0.8A 1.1 F Maximum DC Reverse Current T =25 C A 5.0 A I R at Rated DC Blocking Voltage T =125 C A 100 Typical Junction CapacitanceNote1 C pF j 13 Typical Thermal ResistanceNote2 R JA 180 C/W Operating and Storage Temperature Range T , T j stg -55 ~ +150 C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. P.C.B. mounted with 4x0.1x0.1 (4x2.54x2.54mm) copper pad areas. Page 1 of 3 2015.03 UMB-A-UM10B-0.8A1KV Jingdao Microelectronics UM1B THRU UM10B Fig.1 Average Rectified Output Current Fig.2 Typical Reverse Characteristics Derating Curve 1.0 100 0.8 T =125C J 10 0.6 0.4 1.0 T =25C J 0.2 Resistive or Inductive Load 0.1 0.0 25 50 75 100 125 150 175 00 20 40 60 80 100 120 140 Ambient Temperature (C) percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Fig.4 Typical Junction Capacitance Characteristics 100 10 T =25C J T =25C J 1.0 10 0.1 pulse with 300 s 1% duty cycle 0.01 1 00..00 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles www.sdjingdao.com Page 2 of 3 2015.03 Peak Forward Surage Current (A) Instaneous Forward Current (A) Average Rectified Output Current (A) Junction Capacitance (pF) Instaneous Reverse CurrentA

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Shandong Jingdao Microelectronics