Product Information

MMBT2222A

Name: MMBT2222A
Brand: JSMSEMI
SKU: MMBT2222A_JSMSEMI
Availability: InStock
Rating: 5 (11 reviews)

MMBT2222A electronic component of JSMSEMI

Images are for reference only
See Product Specifications
Datasheet

40V 300mW 600mA 100@150mA,10V 300MHz 1V@500mA,50mA NPN -55℃~+150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: JSMSEMI

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0097 ea
Line Total: USD 0.48

242791 - Global Stock
Ships to you between
Thu. 09 May to Tue. 14 May

MOQ: 50 Multiples: 50
Pack Size: 50

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Availability Price Buy Price Quantity

159225 - Global Stock

Ships to you between
Thu. 09 May to Tue. 14 May
MOQ : 50
Multiples : 50

MMBT2222A
JSMSEMI

50 : USD 0.0113
500 : USD 0.0092
3000 : USD 0.007
6000 : USD 0.0062
24000 : USD 0.0055
45000 : USD 0.0053

Read More Specifications

Manufacturer
JSMSEMI JSMSEMI

Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT

Category
Bipolar Transistors-BJT Bipolar Transistors-BJT

Datasheet
JSMSEMI MMBT2222A JSMSEMI MMBT2222A

Rohs
y y

Collector Cut-Off Current Icbo
10 nA 10 nA

Collector-Emitter Breakdown Voltage Vceo
40 V 40 V

Power Dissipation Pd
300 mW 300 mW

Collector Current Ic
600 mA 600 mA

Dc Current Gain Hfe@Ic Vce
100@150 mA , 10V 100@150 mA , 10V

Transition Frequency Ft
300MHz 300MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib
1 V @500 mA , 50 mA 1 V @500 mA , 50 mA

Transistor Type
NPN NPN

Operating Temperature
- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

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Additional Infomation About Product

The MMBT2222A from JSMSEMI is a SOT-23 (Small Outline Transistor) 3-pin, NPN Bipolar Transistor. It is compliant with the ROHS (Restriction of Hazardous Substances) directive and is capable of handling up to 600 mA with a maximum voltage of 40 V for an intermittent collector current and a continuous collector current of 100 mA at 150 mA or 0.5 V at 500 mA. The transistor has a rated power dissipation of 300 mW at 10 V, 300 MHz with a DC current gain hFE of 50 and a storage temperature range from -55°C to +150°C (Tj).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

JSMSEMI may also be referenced as

JSMSEMI

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Availability	Price	Buy Price	Quantity
159225 - Global Stock Ships to you between Thu. 09 May to Tue. 14 May MOQ : 50 Multiples : 50 MMBT2222A JSMSEMI	50 : USD 0.0113 500 : USD 0.0092 3000 : USD 0.007 6000 : USD 0.0062 24000 : USD 0.0055 45000 : USD 0.0053

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