Product Information

MMBT2907A

MMBT2907A electronic component of JSMSEMI

Datasheet
20nA 300mW 600mA 100@150mA,10V 200MHz 1.6V@500mA,50mA PNP -55℃~+150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: JSMSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0197 ea
Line Total: USD 0.985

19060 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
113053 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 50
Multiples : 50

Stock Image

MMBT2907A
JSMSEMI

50 : USD 0.0181
500 : USD 0.0147
3000 : USD 0.0112
6000 : USD 0.0101
24000 : USD 0.0091
45000 : USD 0.0085

     
Manufacturer
Product Category
Category
Datasheet
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif

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The MMBT2907A is a SOT-23 Bipolar Transistor (BJT) manufactured by JSMSEMI, and is ROHS compliant. It offers an excellent combination of power and current handling capabilities, with a power dissipation rating of 300mW and a collector current of 600mA. It has a collector-emitter saturation voltage of 100@150mA, a collector-emitter breakdown voltage of 10V, and a frequency response of up to 200MHz. It also features a Collector-Emitter saturation voltage of 1.6V@500mA, and a base current of 50mA. This transistor is suitable for use in applications where temperature range is important, as it has a wide operational range of -55? to +150? (Tj). It also has an extremely low gate current of just 20nA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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