Product Information

MMBTH10

MMBTH10 electronic component of JSMSEMI

Datasheet
25V 350mW 50mA 60@4A,10V 650MHz 500mV@4mA,400μA NPN -55℃~+150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Manufacturer: JSMSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

50: USD 0.0106 ea
Line Total: USD 0.53

630 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 50  Multiples: 50
Pack Size: 50

 More Buying Options & Price Grid(s)

Availability Price Quantity
630 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 50
Multiples : 50

Stock Image

MMBTH10
JSMSEMI

50 : USD 0.0105
500 : USD 0.0084
3000 : USD 0.0071
6000 : USD 0.0065
24000 : USD 0.0058
45000 : USD 0.0055

Read More Specifications

     
Manufacturer
Product Category
Category
Datasheet
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
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Additional Infomation About Product

The MMBTH10 is a SOT-23 Bipolar Transistor manufactured by JSMSEMI that is compatible with the RoHS standard. It has an NPN design with a voltage of 25V and a power of 350mW. The current it can handle is up to 50mA, while the peak current is rated at 4A. The frequency that it can operate at is up to 650MHz. The transistor has a voltage drop of 500mV when it is at 4mA and has a minimum collector current of 400µA. The temperature range that the MMBTH10 can handle is from -55? to +150? at the junction temperature (Tj).

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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