Product Information

S8050

S8050 electronic component of JSMSEMI

Datasheet
25V 300mW 500mA 150MHz 600mV@500mA,50mA +150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS

Manufacturer: JSMSEMI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 0.0088 ea
Line Total: USD 0.88

914419 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
910636 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 100
Multiples : 100

Stock Image

S8050
JSMSEMI

100 : USD 0.0088
1000 : USD 0.007
3000 : USD 0.0053
9000 : USD 0.0049
45000 : USD 0.0043
90000 : USD 0.004

18575 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 50
Multiples : 50

Stock Image

S8050
JSMSEMI

50 : USD 0.0135
500 : USD 0.0108
2000 : USD 0.0093
5000 : USD 0.0084
25000 : USD 0.0077
50000 : USD 0.0072

     
Manufacturer
Product Category
Category
Datasheet
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif

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The S8050 is a 25V 300mW 500mA 150MHz 600mV@500mA,50mA +150?@(Tj) SOT-23 Bipolar Transistors - BJT ROHS manufactured by JSMSEMI. It is designed to be used in different electronic device applications and is functionally equivalent to the industry standard 2N7002. This NPN Transistor is a Surface Mounted Device (SMD) and comes with a RoHS compliance certification, ensuring that it is free from hazardous substances and chemicals. It offers a maximum current gain of 20V/mA and a total power dissipation of 500mW. The transistor is be able to handle a maximum junction temperature of +150°C (Tj) with a peak collector current up to 500mA. The S8050 also has a high voltage resistor of 600mV., making it suitable for switching and amplifier applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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