2N5551S-RTK/P KEC

2N5551S-RTK/P electronic component of KEC

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N5551S-RTK/P Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5551S-RTK/P Bipolar Transistors - BJT are a product manufactured by KEC. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.	2N5551S-RTK/P
Manufacturer:	KEC
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) NPN 600mA 160V SOT-23 (SOT-23-3) RoHS
Datasheet:	2N5551S-RTK/P Datasheet (PDF)

Price (USD)

50: USD 0.0298 ea
Line Total: USD 1.49

Availability : 75951

Ship by Mon. 17 Nov to Fri. 21 Nov

Qty Unit Price
50 $ 0.0298
500 $ 0.0234
3000 $ 0.0122
6000 $ 0.011
24000 $ 0.0097
51000 $ 0.0089

2N5551S-RTK/P More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 75951

Ship by Mon. 17 Nov to Fri. 21 Nov

MOQ : 50
Multiples : 50

Qty Unit Price
50 $ 0.0298
500 $ 0.0234
3000 $ 0.0122
6000 $ 0.011
24000 $ 0.0097
51000 $ 0.0089

Specifications

Manufacturer

KEC KEC

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

KEC KEC

Transistor Type

npn npn

Current - Collector Ic Max

600 mA 600 mA

Voltage - Collector Emitter Breakdown Max

160 V 160 V

Power - Max

350 mW 350 mW

Collector Cut-Off Current Icbo

50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo

160 V 160 V

Power Dissipation Pd

350 mW 350 mW

Collector Current Ic

600 mA 600 mA

Dc Current Gain Hfe@Ic Vce

80@10 mA , 5V 80@10 mA , 5V

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA

Operating Temperature

+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

2N5551S-RTK/P Alternative Parts

We are delighted to provide the 2N5551S-RTK/P from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5551S-RTK/P and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The 2N5551S-RTK/P is a NPN transistor manufactured by Korean Electronic Components (KEC) in a SOT-23-3 form factor. It has a maximum collector current of 600mA with a voltage rating of 160V, and is RoHS compliant. The SOT-23-3 form factor is a small outline package with three leads, which is suitable for making surface mount connections. This NPN transistor is used for a variety of applications, such as audio amplifiers and logic circuits.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
50	$ 0.0298
500	$ 0.0234
3000	$ 0.0122
6000	$ 0.011
24000	$ 0.0097
51000	$ 0.0089

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