KVR1333D3S4R9S/4G

Memory Module Speci cations KVR1333D3S4R9S/4G 4GB 1Rx4 512M x 72-Bit PC3-10600 CL9 Registered w/Parity 240-Pin DIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 512M x 72-bit (4GB) CL(IDD) 9 cycles DDR3-1333 CL9 SDRAM (Synchronous DRAM), registered w/ Row Cycle Time (tRCmin) 49.5ns (min.) parity, 1Rx4 ECC memory module, based on eighteen 512M x Refresh to Active/Refresh 160ns (min.) 4-bit DDR3-1333 FBGA components. The SPD is programmed Command Time (tRFCmin) to JEDEC standard latency DDR3-1333 timing of 9-9-9. This Row Active Time (tRASmin) 36ns (min.) 240-pin DIMM uses gold contact fingers. The electrical and Power (Operating) 2.685 W* mechanical specifications are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM and JEDEC standard 1.5V (1.425V ~1.575V) Power Supply Register/PLL used. VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin On-DIMM thermal sensor (Grade B) Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 1.180 (30.00mm), double sided component Continued >> Document No. VALUERAM0979-001.A00 06/01/11 Page 1MODULE DIMENSIONS: Document No. VALUERAM0979-001.A00 Page 2