X-On Electronics has gained recognition as a prominent supplier of KVR16LS11S6/2 DRAM across the USA, India, Europe, Australia, and various other global locations. KVR16LS11S6/2 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

KVR16LS11S6/2 Kingston

KVR16LS11S6/2 electronic component of Kingston
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See Product Specifications
Part No. KVR16LS11S6/2
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3L SDRAM 2Gbyte 204SODIMM
Datasheet: KVR16LS11S6/2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 50.9749 ea
Line Total: USD 50.97 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 50.9749

   
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We are delighted to provide the KVR16LS11S6/2 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR16LS11S6/2 and other electronic components in the DRAM category and beyond.

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Memory Module Speci cations KVR16LS11S6/2 2GB 1Rx16 256M x 64-Bit PC3L-12800 CL11 204-Pin SODIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 256M x 64-bit (2GB) CL(IDD) 11 cycles DDR3L-1600 CL11 SDRAM (Synchronous DRAM) 1Rx16, Row Cycle Time (tRCmin) 48.125ns (min.) memory module, based on four 256M x 16-bit FBGA compo- Refresh to Active/Refresh 260ns (min.) nents. The SPD is programmed to JEDEC standard latency Command Time (tRFCmin) DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin Row Active Time (tRASmin) 35ns (min.) SODIMM uses gold contact fingers. The electrical and me- Maximum Operating Power (1.35V) 1.050 W* chanical specifications are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM used. JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 1.180 (30.00mm), single sided component Continued >> Document No. VALUERAM1397-001.A00 01/15/14 Page 1MODULE DIMENSIONS: Document No. VALUERAM1397-001.A00 Page 2

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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