X-On Electronics has gained recognition as a prominent supplier of LMBT3906LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. LMBT3906LT1G Bipolar Transistors - BJT are a product manufactured by Leshan. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

LMBT3906LT1G Leshan

Name: LMBT3906LT1G
Brand: Leshan
SKU: LMBT3906LT1G_Leshan
Availability: InStock
Rating: 5 (11 reviews)

LMBT3906LT1G electronic component of Leshan

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See Product Specifications

Part No.	LMBT3906LT1G
Manufacturer:	Leshan
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 200mA 40V SOT-23 (SOT-23-3) RoHS
Datasheet:	LMBT3906LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0136 ea
Line Total: USD 0.68

Availability - 116012
Ship by Fri. 11 Jul to Wed. 16 Jul

MOQ: 50 Multiples: 50
Pack Size: 50

LMBT3906LT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

116012

Ship by Fri. 11 Jul to Wed. 16 Jul

MOQ : 50
Multiples : 50

50 : USD 0.0136
500 : USD 0.0104
3000 : USD 0.0066
6000 : USD 0.0051
24000 : USD 0.0046
51000 : USD 0.0043

Specifications

Manufacturer

Leshan Leshan

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Category

Bipolar Transistors-BJT Bipolar Transistors-BJT

Rohs

y y

Package

SOT - 23 (SOT - 23 - 3) SOT - 23 (SOT - 23 - 3)

Brand Category

Leshan Leshan

Transistor Type

pnp pnp

Current - Collector Ic Max

200 mA 200 mA

Voltage - Collector Emitter Breakdown Max

40 V 40 V

Power - Max

225 mW 225 mW

Collector Cut-Off Current Icbo

- -

Collector-Emitter Breakdown Voltage Vceo

40 V 40 V

Power Dissipation Pd

225 mW 225 mW

Collector Current Ic

200 mA 200 mA

Dc Current Gain Hfe@Ic Vce

100@10 mA , 1V 100@10 mA , 1V

Transition Frequency Ft

250MHz 250MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

400 mV @50 mA , 5 mA 400 mV @50 mA , 5 mA

Operating Temperature

- 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

LMBT3906LT1G Alternative Parts

We are delighted to provide the LMBT3906LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LMBT3906LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

Radio CompanyThe LMBT3906LT1G is a PNP (positive-negative-positive) transistor manufactured by the Leshan Radio Company. It features a maximum current rating of 200mA, a maximum voltage rating of 40V, and is housed in a small outline SOT-23-3 package. It has RoHS (restriction of hazardous substances) compliance, making it a safe and reliable option for your electronics designs. This component is ideal for introducing or amplifying current signals in electronic circuits and applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
116012 Ship by Fri. 11 Jul to Wed. 16 Jul MOQ : 50 Multiples : 50	50 : USD 0.0136 500 : USD 0.0104 3000 : USD 0.0066 6000 : USD 0.0051 24000 : USD 0.0046 51000 : USD 0.0043

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