GEN2 SiC Schottky Diode LSIC2SD065D16A, 650 V, 16 A, TO-263-2L (D2PAK) RoHS Pb LSIC2SD065D16A 650 V, 16 A SiC Schottky Barrier Diode Description This series of silicon carbide (SiC) Schottky diodes has neg- ligible reverse recovery current, high surge capability, and a SiC Schottky Diode maximum operating junction temperature of 175 C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Features AEC-Q1 01 qualified Excellent surge capability Positive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 175 C maximum switching losses operating junction compared to Si bipolar temperature diodes Circuit Diagram TO-263-2L Applications Case Case B oost diodes in PFC or Solar inverters DC/DC stages Industrial motor drives Switch-mode power EV c harging stations supplies 12 Uninter ruptible power supplies 1 2 Environmental RoHS Littelfuse RoHS logo = RoHS conform Lit telfuse HF logo = Halogen Free Pb Littelfuse Pb-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage 650 V V - RRM DC Blocking Voltage 650 V V T = 25 C R J 38 T = 25 C C Continuous Forward Current 17.2 A I T = 135 C F C T = 140 C 16 C Non-Repetitive Forward Surge Current 70 A I T = 25 C, T = 10 ms, Half sine pulse FSM C P T = 25 C 125 C Power Dissipation P W Tot 54 T = 110 C C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C SOLD 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/21/19GEN2 SiC Schottky Diode LSIC2SD065D16A, 650 V, 16 A, TO-263-2L (D2PAK) Electrical Characteristics (T = 25 C unless otherwise specified) J Value Characteristics Symbol Conditions Unit SiC Schottky Diode Min. Typ. Max. - 1.5 1.8 I = 16 A, T = 25 C F J Forward Voltage V V F - 1.85 - I = 16 A, T = 175 C F J - <1 50 V = 650 V , T = 25 C R J Reverse Current A I R V = 650 V , T = 175 C - 55 - R J - 730 - V = 1 V, f = 1 MHz R Total Capacitance - 92 - pF C V = 200 V, f = 1 MHz R V R V = 400 V, f = 1 MHzC(V)dV - 66 - Qc = R V0 R C(V)dV Total Capacitive Charge Q V = 400 V, Qc = - 48 - nC C R 0 Thermal Characteristics Characteristics Symbol Value Unit Thermal Resistance 1.2 C/W R JC Figure 1: T ypical Foward Characteristics Figure 2: Typical Reverse Characteristics 16 T = 25 C J 14 12 T = 150 C J T = 125 C J 10 T = 175 C J 8 6 4 2 T = -55 C J 0 00.250.5 0.75 11.251.5 1.75 2 Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/21/19 Current (A)