GEN2 SiC Schottky Diode LSIC2SD120E15CC, 1200 V, 15 A, TO-247-3L RoHS Pb LSIC2SD120E15CC Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 C. These diodes series are ideal for applications where im- provements in efficiency, reliability, and thermal manage - ment are desired. Features P ositive temperature Extremely f ast, coefficient for safe temperature-independent operation and ease of switching behavior paralleling Dramatically reduced 1 75 C maximum switching losses operating junction compared to Si bipolar temperature diodes Excellent surge capability Circuit Diagram TO247-3L Applications B oost diodes in PFC or Solar inverters DC/DC stages Industrial motor drives PIN 1 S witch-mode power EV c harging stations supplies Uninterruptible power PIN 2 CASE supplies Environmental PIN 3 RoHS Littelfuse RoHS logo = RoHS conform Littelfuse HF logo = Halogen Free Pb Lit telfuse PB-free logo = Pb-free lead plating Maximum Ratings Characteristics Symbol Conditions Value Unit Repetitive Peak Reverse Voltage V - 1200 V RRM DC Blocking Voltage V T = 25 C 1200 V R j T = 25 C 24.5/49 C Continuous Forward Current I T = 135 C 12/24 A F C (Per Leg/Device) T = 154 C 8/16 C Non-Repetitive Forward Surge Current (Per Leg) I T = 25 C, T = 10 ms, Half sine pulse 65 A FSM C P T = 25 C 125/250 Power Dissipation C P W Tot (Per Leg/Device) T = 110 C 54/108 C Operating Junction Temperature T - -55 to 175 C J Storage Temperature T - -55 to 150 C STG Soldering Temperature T - 260 C sold 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: January 7, 2020 11:01 PMGEN2 SiC Schottky Diode LSIC2SD120E15CC, 1200 V, 15 A, TO-247-3L Electrical Characteristics (Per Leg) Value Characteristics Symbol Conditions Unit Min. Typ. Max. I = 8 A, T = 25 C - 1.5 1.8 F J Forward Voltage V V F I = 8 A, T = 175 C - 2.2 - F J V = 1200 V , T = 25 C - <1 100 R J Reverse Current I A R V = 1200 V , T = 175 C - 10 R J V = 1 V, f =1 MHz - 454 - R Total Capacitance C V = 400 V, f = 1 MHz - 45 - pF R V = 800 V, f = 1 MHz - 33 - R V R Total Capacitive Charge Q V = 800 V, Q = C(V)dV - 47 - nC C R c 0 Footnote: T = +25 C unless otherwise specified J Thermal Characteristics Value Characteristics Symbol Conditions Unit Min. Typ. Max. Thermal Resistance (Per Device/Leg) R - - 1.2/0.6 - C/W JC Figure 1: T ypical Foward Characteristics (Per Leg) Figure 2: T ypical Reverse Characteristics (Per Leg) 1E-4 16 T = - 55C J 14 T = 25C J T = 125C J 1E-5 12 T = 150C J T = 175C J 10 8 1E-6 T = 175 C J 6 T = 150 C J 4 1E-7 2 T = 25 C J T = 125 C 0 J 1E-8 00.5 11.5 22.5 33.5 4 0200 400600 80010001200 Forward Voltage (V) Reverse Voltage, V (V) R 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: January 7, 2020 11:01 PM Forward Current (A) Reverse Current, I (A) R