TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1005 Series RoHS Pb GREEN SP1005 Series 30pF 30kV Bidirectional Discrete TVS Description The SP1005 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present. Pinout Features 0201 Flipchip ESD, IEC 61000-4-2, Low leakage current of 30kV contact, 30kV air 0.1A at 5V 12 EFT, IEC 61000-4-4, 40A Space efficient 0201 and (5/50ns) 0402 footprint Lightning, IEC 61000-4-5 AEC-Q101 qualified (2nd Ed.), 10A (t =8/20s) SOD882 P (SOD882 package) Low capacitance of 30pF ( V =0V) R 1 2 Applications AEC-Q101 qualified Mobile Phones MP3/PMP Smart Phones Portable Navigation Devices Camcorders Tablets Portable Medical Functional Block Diagram Point of Sale Terminals Digital Cameras Application Example 2 1 Keypads I/O Controller P1 P2 Additional Information P3 IC P4 SP1007-01WTG (x4) Datasheet Resources Samples GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/17/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1005 Series Absolute Maximum Ratings Symbol Parameter Value Units 1 10.0 I Peak Current (t =8/20s) A PP p 2 8.0 T Operating Temperature 40 to 125 C OP T Storage Temperature 55 to 150 C STOR Notes: 1. 1 indicates SP1005-01WTG , while 2 indicates SP1005-01ETG 2. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range 55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 6.0 V RWM Breakdown Voltage V I =1mA 8.5 9.5 V BR R Leakage Current I V =5V with 1 pin at GND 0.1 0.5 A LEAK R I =1A, t =8/20s, Fwd 9.3 V PP p 1 Clamp Voltage V I =2A, t =8/20s, Fwd 10.0 V C PP p I =10A, t =8/20s, Fwd 15.6 V PP P 2 Dynamic Resistance R TLP, tp =100ns, I/O to GND 0.28 DYN IEC61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V 30 pF 1 Diode Capacitance C D Reverse Bias=2.5V 23 pF Notes: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width and 200 s rise time. Capacitance vs. Reverse Bias Pulse Waveform 40.0 110% 100% 35.0 90% 30.0 80% 25.0 70% 60% 20.0 50% 15.0 40% 10.0 30% 5.0 20% 10% 0.0 0% 0.0 0.5 1.01.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Bias Voltage (V) Time (s) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/17/19 Capacitance (pF) Percent of I PP