TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1026 Series RoHS Pb GREEN SP1026 Series 15pF 30kV Bidirectional Discrete TVS Description The SP1026 back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1026 TVS can safely absorb repetitive ESD strikes at 30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 5A of 8/20s surge current (IEC 61000-4-5) with very low clamping voltages. Pinout Features ESD, IEC 61000-4-2, 0.5A (MAX) at 5V 30kV contact, 30kV air Space efficient 0201 EFT, IEC 61000-4-4, 40A footprint (5/50ns) Halogen free, Lead free Pin 1 Pin 2 Lightning, 5A (8/20s as and RoHS compliant defined in IEC 61000-4-5 DFN-2 footprint nd 2 edition) component Low leakage current of AEC-Q101 qualified Functional Block Diagram Applications Mobile phones Portable navigation devices Smart phones 1 Portable medical devices Smart watches Tablets Application Example Keypads I/O Controller P1 P2 2 Outside P3 IC World P4 SP1026 (x4) Case GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/10/19 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1026 Series Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 5 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A - - 6.0 V RWM R Breakdown Voltage V I =1mA - 7.8 - V BR R Reverse Leakage Current I V =5V 0.1 0.5 A LEAK R I =1A, t =8/20s - 12.0 - V pp p 1 Clamp Voltage V C I =2A, t =8/20s - 13.4 - V pp p 2 Diode Capacitance R TLP, t =100ns, I/O to GND 1.4 - DYN p IEC 61000-4-2 (Contact Discharge) 30 - - kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 - - kV Reverse Bias=0V, f= 1 MHz - 15 - pF 1 Diode Capacitance C I/O-I/O Reverse Bias=2.5V, f= 1 MHz - 12 - pF 1 - Parameter is guaranteed by design and/or component characterization. 2 - Transmission Line Pulse(TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2=90ns. Capacitance vs. Reverse Bias Insertion Loss (S21) I/O to GND 0 20 -5 15 -10 -15 10 -20 5 -25 -30 0 10 1000 100 00.5 11.5 22.5 33.544.5 5 Frequency (MHz) Bias Voltage (V) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/10/19 Capacitance (pF) Attenuation (dB)