Product Information

SP1326-01LTG

SP1326-01LTG electronic component of Littelfuse

Datasheet
ESD Suppressors / TVS Diodes 15pF 30kV SOD-523 BI-DIR DIS TVS DIODE

Manufacturer: Littelfuse
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4287 ea
Line Total: USD 0.43

67576 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
67091 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

SP1326-01LTG
Littelfuse

1 : USD 0.4287
10 : USD 0.2814
100 : USD 0.1389
1000 : USD 0.1014
5000 : USD 0.0978
10000 : USD 0.0882
25000 : USD 0.0857
50000 : USD 0.0809
100000 : USD 0.0785

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
LoadingGif

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TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1326 RoHS Pb GREEN SP1326 15pF 30kV Bidirectional Discrete TVS Description TThe SP1he SP1326 bac326 back-to-back-to-back diodes are fk diodes are fabricated in a proprietabricated in a proprietarary y silicon asilicon avvalancalanche teche technologyhnology TThese diodes prohese diodes provide a high vide a high ESD (electrostESD (electrostatic discatic discharge) protection leharge) protection levvel fel for electronic or electronic equipment. equipment. TThe SP1he SP1326 326 TVS can safTVS can safely absorb repetitively absorb repetitive e ESD strikESD strikes at 30kV (contes at 30kV (contact and air discact and air discharge, IEC 61harge, IEC 6100000-0- 4-2) without perf4-2) without performance degradation. ormance degradation. AAdditionallydditionally, eac, each h diode can safdiode can safely dissipate 4A of 8/20s surge curely dissipate 4A of 8/20s surge current (IEC rent (IEC ndnd 616100000-4-5 0-4-5 22 edition) edition) with with vverery y lolow w clamping clamping vvoltoltages. ages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low leakage current of 30kV contact, 30kV air 0.02A (TYP) at 5V EFT, IEC 61000-4-4, 40A Space efficient 1 (5/50ns) Halogen free, Lead free Lightning, 4A (8/20s as and RoHS compliant defined in IEC 61000-4-5 Moisture Sensitivity Level nd 2 edition) (MSL -1) AEC-Q101 qualified and PPAP capable Applications Mobile phones Portable navigation components 2 Smart phones Portable medical Smart watches components Tablets Application Example Keypads I/O Controller P1 P2 Outside P3 IC World P4 SP1326 (x4) SP1026 (x4) Case GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 12/16/20 TVS Diode Array (SPA Diodes) General Purpose ESD Protection - SP1326 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 4 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 6.0 V RWM R Breakdown Voltage V I =1mA 7.8 V BR R Reverse Leakage Current I V =5V 0.02 0.5 A LEAK R I =1A, t =8/20s, I/O to I/O 12.0 V pp p 1 Clamp Voltage V C I =4A, t =8/20s, I/O to I/O 15.5 V pp p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.35 DYN P IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V, f=1MHz 15 pF 1 Diode Capacitance C I/O-I/O Reverse Bias=2.5V, f=1MHz 12 pF Note: 1 Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias 8/20s Pulse Waveform 110% 16.0 100% 14.0 90% 12.0 80% 70% 10.0 60% 8.0 50% 6.0 40% 4.0 30% 20% 2.0 10% 0.0 0% 012345 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Bias Voltage (V) Time (s) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 12/16/20 Capacitance (pF) Percent of I PP

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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