TVS Diode Arrays (SPA Diodes) Datasheet SP33R6 0.2pF, 12KV Diode Array, Low Voltage Low Capacitance ESD Protection RoHS Pb GREEN Description The SP33R6 forward PN junction diode fabricated in a proprietary silicon technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high speed signal pins. Features ESD, IEC 61000-4-2, 12kV Low capacitance of 0.2pF Note: This package image is for example and reference only. for detail package drawing, please refer to the package section in this datasheet. contact, 15kV air (TYP) per I/O EFT, IEC 61000-4-4, 40A Halogen free, lead free and Pinout (5/50ns) RoHS compliant 6 7 8 9 10 Lightning, 3A (8/20s as nd defined in IEC 61000-4-5,2 Edition) 5 4 3 2 1 Applications Functional Block Diagram USB 3.x Thunderbold 3.0 1 2 4 5 PCIE 3,8 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/01/21 TVS Diode Arrays (SPA Diodes) Datasheet SP33R6 0.2pF, 12KV Diode Array, Low Voltage Low Capacitance ESD Protection Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 3 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 0.3 V RWM R Breakdown Voltage V I =1mA 0.7 0.9 V BR R Reverse Leakage Current I V =0.3V, Any I/O to GND 100 nA LEAK R I =1A, t =8/20s 2.5 PP p 1 Clamp Voltage V V C I =2A, t =8/20s 3.3 PP p 3 Dynamic Resistance R TLP, t =100ns 0.3 DYN P IEC 61000-4-2 (Contact Discharge) 12 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 kV 1, 2 Line Capacitance C Reverse Bias=0V, f=3GHz 0.2 pF L Note 1: Parameter is guaranteed by design and/or component characterization. Note 2: Test equipment accuracy 50fF. Note 3: Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns 8/20s Pulse Waveform Clamping Voltage vs I PP 110% 5.0 100% 90% 4.0 80% 70% 3.0 60% 50% 2.0 40% 30% 1.0 20% 0.0 10% 12 3 0% Peak Pulse Current - I (A) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 PP Time (s) 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/01/21 Percent of I PP Clamp Voltage (V ) C