TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3014 Series SP3401 RoHS GREEN Pb SP3401, 0.35pF, 18kV Diode Array Description SP3401 is specifically designed to protect high-speed interfaces against ElectroStatic Discharge (ESD), such as DisplayPort interfaces and USB 3.1 Gen 1. The signal line is protected by a TVS diode offering low line capacitance of 0.35 pF typical. SP3401 can safely absorb repetitive ESD strikes up to 18 kV contact exceeding IEC 61000-4-2, level 4 ( 8kV contact discharge). Excellent low capacitance, clamping capability, low leakage, and fast response time make this parts an ideal solution for protecting high speed data lines. Pinout Features ESD, IEC 61000-4-2, Small form factor DFN 18kV contact, 30kV air (JEDEC MO-229) package provides flow through EFT, IEC 61000-4-4, 80A routing to simplify PCB (t =5/50ns) P layout Lightning, IEC 61000- nd AEC-Q101 qualified 4-5 2 edition, 10A (t =8/20s) Moisture Sensitivity P Level(MSL -1) Low capacitance of 0.35pF (TYP) per I/O Halogen free, lead free and RoHS compliant Low leakage current of 1nA (TYP) at 3.3V Functional Block Diagram Applications USB 3.1 Gen1 NFC DisplayPort 1G/2.5G/10G Ethernet S-ATA USB Protection Application Example USB Port *Package is shown as transparent USB Controller V BUS D+ D- SP1003 IC SP3401 SP3014 GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. SP3014-02UTG Specifications are subject to change without notice. Revision: 08/15/19 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP3014 Series SP3401 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 10 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A 3.3 V RWM R Breakdown Voltage V I = 1mA, I/O to I/O 6.5 8.2 11.5 V BR R Reverse Leakage Current I V =3.3V 1 100 nA LEAK R I =1A, t =8/20s, I/O to I/O 4 5 V PP p 1 Clamp Voltage V C I =10A, t =8/20s, I/O to I/O 7.5 9 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to I/O 0.28 DYN p IEC 61000-4-2 (Contact Discharge) 18 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV C 0.8 1 I/O-GND 1 Diode Capacitance Reverse Bias=0V, f=1MHz pF C 0.35 0.55 I/O-I/O Note: 1 Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns. 8/20s Pulse Waveform Clamping voltage vs. I for 8/20s waveshape PP 8.0 110% 100% 90% 6.0 80% 70% 4.0 60% 50% 40% 2.0 30% 20% 0.0 10% 12345678 910 0% 0.05.0 10.015.020.025.030.0 Peak Pulse Current-I (A) PP Time (s) 2019 Littelfuse, Inc. SP3014-02UTG Specifications are subject to change without notice. Revision: 08/15/19 Percent of I PP Clamp Voltage (V ) C SP3012