TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP4045 Series RoHS Pb GREEN SP4045 Series 1.5pF 24A Diode Array (HDBaseT) Description The SP4045 integrates low capacitance diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can safely nd absorb up to 24A per IEC 61000-4-5 2 edition (tp=8/20s) without performance degradation and a minimum 30kV ESD per IEC 61000-4-2 International Standard. Their low loading capacitance also makes them ideal for protecting high speed signal pins. Pinout Features nd Signal-integrity-preservingl 2 edition, 24A (8/20s) straight through routing I/O 1 NC Low capacitance of 1.5pF Low leakage current of (TYP) per I/O I/O 4 NC 1A (MAX) at 3.3V AEC-Q101 qualified GND GND ESD, IEC 61000-4-2, Halogen free, Lead free I/O 3 NC 30kV contact, 30kV air and RoHS compliant I/O 2 NC EFT, IEC 61000-4-4, 40A Moisture Sensitivity Level (5/50ns) (MSL Level-1) Lightning, IEC 61000-4-5 Functional Block Diagram Applications HDBaseT Protector T3/E3 Secondary Protection 10/100/1000 Ethernet Pin1 Pin5 Pin7 Pin9 A/V Equipment 2.5 and 5 Gigabit Ethernet Automotive Ethernet T1/E1 Secondary Protection GND Additional Information Pins 3,8 Datasheet Resources Samples Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/29/16 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP4045 Series Absolute Maximum Ratings Thermal Information Parameter Rating Units Symbol Parameter Value Units Storage Temperature Range -55 to 150 C I Peak Current (t =8/20s) 24 A PP p Maximum Junction Temperature 150 C P Peak Pulse Power (t =8/20s) 600 W PK p Maximum Lead Temperature C T Operating Temperature -40 to 125 C 260 OP (Soldering 20-40s) T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V 3.3 V RWM Snap Back Voltage V I =50mA 2.8 V SB SB Reverse Leakage Current I V =3.3V, I/O to GND 0.5 1.0 A LEAK R I =1A, t =8/20s, Fwd 6.0 V PP p 1 Clamp Voltage V C I =2A, t =8/20s, Fwd 7.0 V PP p 2 Dynamic Resistance R TLP t =100ns, Pin 1 to Pin 2 0.3 DYN p IEC61000-4-2 (Contact) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air) 30 kV 1 Diode Capacitance C Reverse Bias=0V 1.5 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: star t1=70ns to end t2=80ns 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 2 100% 90% 1.5 80% 70% 60% 1 50% 40% 0.5 30% 20% 10% 0 00.3 0.60.9 1.21.5 1.82.1 2.42.7 33.3 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Bias Voltage (V) Time (s) 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/29/16 Percent of I PP Capacitance (pF)