TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP4322 RoHS Pb GREEN SP4322 0.4pF 11A Bidirectional Diode Array Description SP4322 is specifically designed to protect high-speed interfaces against ElectroStatic Discharge (ESD), such as DisplayPort interfaces and USB 3.1 Gen 1. The signal line is protected by low line capacitance of 0.4 pF typical. SP4322 can absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard without performance degradation and safely nd dissipate 11A of 8/20s surge current (IEC 61000-4-5 2 edition). Excellent low capacitance, clamping capability, low Note: This package image is for example and reference only. for detail package drawing, please refer to the package section in this datasheet. leakage, and fast response time make this part an ideal solution for protecting high speed data lines. Pinout Features ESD, IEC 61000-4-2, Low leakage current of 0201 Flipchip 18kV contact, 30kV air 1nA (TYP) at 5V EFT, IEC 61000-4-4, 40A Halogen free, lead free 12 (5/50ns) and RoHS compliant Lightning, 11A (8/20s as Moisture Sensitivity Level SOD882 defined in IEC 61000-4-5 (MSL -1) nd 2 edition) AEC-Q101 Qualified Low capacitance of 0.4pF (TYP V =0V) R Functional Block Diagram Applications USB 3.1 NFC DisplayPort 1G/2.5G/10G Ethernet 2 1 S-ATA Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/14/20 TVS Diode Arrays (SPA Diodes) Low Capacitance ESD Protection - SP4322 Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 11 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5 V RWM R Breakdown Voltage V I =1mA 9 V BR R Reverse Leakage Current I V =5V 1 100 nA LEAK R Holding Voltage V I/O to I/O 2.3 V HOLD I =1A, t =8/20s 4 V PP p 1 Clamp Voltage V C I =11A, t =8/20s 8 V PP p 2 Dynamic Resistance R TLP, t =100ns 0.2 DYN P IEC 61000-4-2 (Contact Discharge) 18 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 0.4 0.5 pF IO-GND Note: 1. Parameter is guaranteed by design and/or component characterization. 2.Transmission Line Pulse (TLP) with 100ns width, 0.2ns rise time, and average window t1=70ns to t2= 90ns Capacitance vs. Reverse Bias Clamping voltage vs. I for 8/20s waveshape PP 1.0 10.0 0.9 0.8 8.0 0.7 0.6 6.0 0.5 4.0 0.4 0.3 2.0 0.2 0.1 0.0 0.0 1357 911 00.5 11.5 22.5 33.5 44.5 5 Peak Pulse Current-I (A) PP Bias Voltage (V) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 04/14/20 Capacitance (pF) Clamp Voltage (V ) C