Product Information

SPHV12-01KTG

SPHV12-01KTG electronic component of Littelfuse

Datasheet
Littelfuse TVS Diode Arrays 200W 12V Uni

Manufacturer: Littelfuse
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5005 ea
Line Total: USD 0.5

58634 - Global Stock
Ships to you between
Tue. 21 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46512 - WHS 1


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

SPHV12-01KTG
Littelfuse

1 : USD 0.3599
10 : USD 0.2795
100 : USD 0.169
500 : USD 0.1576
1000 : USD 0.1138
2500 : USD 0.1058
10000 : USD 0.0943
20000 : USD 0.0943
50000 : USD 0.0908

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Peak Surge Current
Height
Length
Width
Brand
Mounting Style
Pd - Power Dissipation
Tradename
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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TVS Diode Array Datasheet SPHV Series 200W Discrete Unidirectional TVS Diode RoHS Pb GREEN Description The unidirectional SPHV series is designed for use in portable applications, LED lighting modules, automotive applications, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The SPHV series can safely absorb repetitive ESD strikes above the maximum level of the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation and safely dissipate up to 8A (SPHV12) of induced surge current (IEC 61000-4-5, 2nd Edition tP=8/20s) with very low clamping voltages. Features ESD, IEC 61000-4-2, 30kV Low clamping voltage contact, 30kV air Low leakage current Additional Information EFT, IEC 61000-4-4, 40A Small SOD882 packaging (5/50ns) helps save board space Lightning, IEC 61000-4-5, AEC-Q101 qualifie 2nd Edition 8A (tP=8/20s, Lead-free, Halogen-free, and SPHV12) RoHS Compliant Resources Accessories Samples Applications LED Lighting Modules Mobile & Handhelds Pinout Portable Instrumentation RS232 / RS485 General Purpose I/O CAN and LIN Bus 1 Functional Block Diagram 1 2 2 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 04/15/21TVS Diode Array Datasheet SPHV Series 200W Discrete Unidirectional TVS Diode Absolute Maximum Ratings Symbol Parameter Value Units P Peak Pulse Power (t =8/20s) 200 W pk p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. SPHV12 Electrical Characteristics (TOP=25C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 12.0 V RWM R Breakdown Voltage V I =1mA 13.3 V BR R Reverse Leakage Current I V =12V 1.0 A LEAK R I =1A, t =8/20s, Fwd 19.0 V PP p 1 Clamp Voltage V C I =8A, t =8/20s, Fwd 25.0 V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.37 DYN p Peak Pulse Current I t =8/20s 8.0 A pp p IEC61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 60 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. SPHV15 Electrical Characteristics (TOP=25C) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I 1A 15.0 V RWM R Breakdown Voltage V I =1mA 16.7 V BR R Reverse Leakage Current I V =15V 1.0 A LEAK R I =1A, t =8/20s, Fwd 22.0 V PP p 1 Clamp Voltage V C I =5A, t =8/20s, Fwd 28.0 V PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.40 DYN p Peak Pulse Current I t =8/20s 5.0 A pp p IEC61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 46 pF I/O-GND Note: 1. Parameter is guaranteed by design and/or device characterization. 2. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 04/15/21

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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