Product Information

LY62W10248ML-55LLI

LY62W10248ML-55LLI electronic component of Lyontek

Datasheet
SRAM, 8M, 1MX8, 2.7-5.5V, 44TSOPII

Manufacturer: Lyontek
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 15.4761 ea
Line Total: USD 15.4761

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1
1 : USD 11.654
10 : USD 10.242
25 : USD 9.8378
50 : USD 9.3768
100 : USD 8.9799
250 : USD 8.7483

     
Manufacturer
Product Category
Memory Size
Access Time
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Sram Memory Configuration
Supply Voltage Range
Memory Case Style
No. Of Pins
Operating Temperature Min
Operating Temperature Max
Rohs Phthalates Compliant
Msl
Svhc
Operating Temperature Range
Supply Voltage Max
Supply Voltage Min
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LY62W10248 Rev. 1.7 1024K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jan.10.2008 Rev. 1.1 Added ISB Spec. Feb.1.2008 Rev. 1.2 Revised ICC1/ISB1/V /I Spec. Mar.2.2009 DR DR Rev. 1.3 Revised VTERM to VT1 and VT2 May.7.2010 Revised Test Condition of ISB1/IDR FEATURES ORDERING INFORMATION Revised & Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted T in ABSOLUTE MAXIMUN RATINGS SOLDER Revised PACKAGE OUTLINE DIMENSION in page 11 Revised V to 0.7*Vcc IH Rev. 1.4 Aug.25.2010 Revised ORDERING INFORMATION in page 11 Rev. 1.5 Deleted E grade Apr.25.2011 Added SL grade Revised V in page 3 IH Rev. 1.6 Revised TEST CONDITION of VIH in page 4 May.13.2011 Rev. 1.7 Jul.27.2011 Revised PACKAGE OUTLINE DIMENSION in page 10 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 LY62W10248 Rev. 1.7 1024K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The LY62W10248 is a 8,388,608-bit low power Fast access time : 55/70ns CMOS static random access memory organized as Low power consumption: 1,048,576 words by 8 bits. It is fabricated using very Operating current : 30/20mA (TYP.) high performance, high reliability CMOS technology. Standby current : 6 A (TYP.) LL-version Its standby current is stable within the range of 3A (TYP.) SL-version operating temperature. Single 2.7V ~ 5.5V power supply All inputs and outputs TTL compatible The LY62W10248 is well designed for very low Fully static operation power system applications, and particularly well Tri-state output suited for battery back-up nonvolatile memory Data retention voltage : 1.5V (MIN.) application. Green package available Package : 44-pin 400 mil TSOP-II The LY62W10248 operates from a single power 48-ball 6mm x 8mm TFBGA supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Power Dissipation Product Operating Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) LY62W10248 0 ~ 70 2.7 ~ 5.5V 55/70ns 6A(LL)/3A(SL) 30/20mA LY62W10248(I) -40 ~ 85 2.7 ~ 5.5V 55/70ns 6A(LL)/3A(SL) 30/20mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A19 Address Inputs Vcc Vss DQ0 DQ7 Data Inputs/Outputs CE , CE2 Chip Enable Inputs 1024Kx8 A0-A19 DECODER MEMORY ARRAY WE Write Enable Input OE Output Enable Input VCC Power Supply VSS Ground NC No Connection I/O DATA DQ0-DQ7 COLUMN I/O CIRCUIT CE CE2 CONTROL WE CIRCUIT OE Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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