DU2820S RF Power MOSFET Transistor Rev. V2 20 W, 2 - 175 MHz, 28 V Package Outline Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 24 A DS Power Dissipation P 62.5 W D Junction Temperature T 200 C J Storage Temperature T -55 to +150 C STG Thermal Resistance 2.8 C/W JC LETTER MILLIMETERS INCHES TYPICAL DEVICE IMPEDANCE DIM MIN MAX MIN MAX F (MHz) Z () Z () IN LOAD A 24.64 24.89 .970 .980 30 17.5 - j13.0 16.0 - j2.5 B 18.29 18.54 .720 .730 C 20.07 20.83 .790 .820 50 15.0 - j15.5 15.0 - j4.0 D 9.47 9.73 .373 .383 100 8.0 - j14.0 12.0 - j6.0 E 6.22 6.48 .245 .255 200 5.5 - j8.0 9.25 - j6.0 F 5.64 5.79 .222 .228 V = 28V, I = 100mA, P = 20 W DD DQ OUT G 2.92 3.30 .115 .130 Z is the series equivalent input impedance of the device IN H 2.29 2.67 .090 .105 from gate to source. J 4.04 4.55 .159 .179 K 6.58 7.39 .259 .291 Z is the optimum series equivalent load impedance LOAD as measured from drain to ground. L .10 .15 .004 .006 ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 5.0 mA DSS GS DS Drain-Source Leakage Current I - 1.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 1.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 100.0 mA GS(TH) DS DS Forward Transconductance G 500 - S V = 10.0 V , I = 100.0 mA , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 45 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance - 40 pF V = 28.0 V , F = 1.0 MHz C DS OSS Reverse Capacitance C - 8 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 13 - dB V = 28.0 V, I = 100 mA, P = 20 W F =175 MHz P DD DQ OUT Drain Efficiency 60 - % V = 28.0 V, I = 100 mA, P = 20 W F =175 MHz D DD DQ OUT Load Mismatch Tolerance VSWR-T - 30:1 - V = 28.0 V, I = 100 mA, P = 20 W F =175 MHz DD DQ OUT 1 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: htt p s:// ww w.m a com . com / su p por t DU2820S RF Power MOSFET Transistor Rev. V2 20 W, 2 - 175 MHz, 28 V Typical Broadband Performance Curves GAIN FREQUENCY EFFICIENCY FREQUENCY VS VS V =28 V I =100 mA P =20 W V =28 V I =100 mA P =20 W DD DQ OUT DD DQ OUT 30 70 25 20 65 15 10 60 0 25 50 100 150 200 0 25 50 100 150 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT POWER INPUT VS V =28 V I =100 mA DD DQ 30 200MHz 150MHz 100MHz 25 20 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.7 POWER INPUT (W) 2 22 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: htt p s:// ww w.m a com . com / su p por t GAIN (dB) POWER OUTPUT (W) EFFICIENCY (%)