Product Information


MA4AGSW2 electronic component of MACOM

RF Switch ICs 50-70000MHz ISO 65dB IL .7dB

Manufacturer: MACOM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 20.5533 ea
Line Total: USD 2055.33

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0 - Global Stock

Ships to you between Tue. 17 Oct to Thu. 19 Oct

MOQ : 100
Multiples : 100

Stock Image


100 : USD 16.698
300 : USD 16.192
500 : USD 15.41
1000 : USD 15.1685
2500 : USD 15.1685
5000 : USD 15.1455

Product Category
RF Switch ICs
Number of Switches
Switch Configuration
Insertion Loss
0.7 Db
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
50 Mhz To 70 Ghz
Maximum Power Dissipation
23 dBm
Factory Pack Quantity :
Hts Code
Pd - Power Dissipation
23 dBm
Product Type
Rf Switch Ics
Wireless & Rf Integrated Circuits
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SPDT AlGaAs PIN Diode Switch MA4AGSW2 Rev. V8 Features Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional Bandwidth: 50 MHz to 70 GHz Insertion Loss: 0.7 dB Isolation: 33 dB 50 GHz Low Current Consumption: -10 mA for Low Loss State +10 mA for Isolation State MACOMs Unique AlGaAs Hetero-Junction Anode Technology Silicon Nitride Passivation Polymer Scratch Protection RoHS Compliant Applications Yellow areas indicate bond pads Aerospace & Defense ISM Description The MA4AGSW2 is an Aluminum-Gallium-Arsenide, single pole, double throw (SPDT), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOMs hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip Ordering Information anode air-bridges. Off chip bias circuitry is required. Part Number Package The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this MA4AGSW2 waffle pack switch ideal for fast response, high frequency, multi-throw switch designs. AlGaAs PIN diode MASW-000552-13210G Gel Pack switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi-assembly components. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: SPDT AlGaAs PIN Diode Switch MA4AGSW2 Rev. V8 Electrical Specifications: 1 T = +25C, 10 mA Bias Current , 5 V (on-wafer measurements) A Parameter Test Conditions Units Min. Typ. Max. 0.05 - 18 GHz 0.5 0.6 Insertion Loss dB 18 - 50 GHz 0.7 0.9 0.05 - 18 GHz 45 47 Isolation dB 18 - 50 GHz 28 33 0.05 - 18 GHz 22 Input Return Loss dB 18 - 50 GHz 21 0.05 - 18 GHz 25 Output Return Loss dB 18 - 50 GHz 22 2 Switching Speed 5 V TTL Compatible PIN Diode Driver, ns 20 (10 - 90% RF Voltage) 10 GHz 1. Bias current of 10 mA is recommended for optimal performance. 2. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a 5 V TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 - 560 pF and a resistor between 150 - 220 to achieve 15 ns rise and fall times. 3,4,5 Absolute Maximum Ratings T = +25C A Parameter Absolute Maximum Incident C.W. RF Power 23 dBm DC Reverse Voltage 25 V Bias Current 25 mA Junction Temperature +175C Operating Temperature -55C to +125C Storage Temperature -55C to +150C Assembly Temperature +300C < 10 sec. 3. Maximum combined operating conditions for RF Power, DC bias, and temperature: 23 dBm C.W. 10 mA (per diode) +85C. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aeroflex / Metelics (MACOM)
Aeroflex Metelics
M/A-COM Technology Solutions