MA4E20xx Series GaAs Beam Lead Schottky Diode Rev. V6 Features MA4E2037 Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Description and Applications The MA4E2037 single diode, MA4E2039 anti- parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series MA4E2039 resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection. The protective coatings prevent damage to the junction and the anode air bridge during handling. The high cut-off frequency of these diodes allows use through millimeter wave frequencies. Typical applications include single and double balanced mixers in PCN transceivers and radios, automotive radar systems and police radar detectors. The MA4E2039 anti-parallel pair is designed for use MA4E2040 in sub harmonically pumped mixers. Close matching of the diode characteristics in high LO suppression at the RF input. Ordering Information Part Number Package MA4E2037 Gel Pack (100 piece per) MA4E2039 Gel Pack (100 piece per) MA4E2040 Gel Pack (100 piece per) Notes: (Unless otherwise specified) Dimensions are in mm (mils). Views are with junction side up. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4E20xx Series GaAs Beam Lead Schottky Diode Rev. V6 Electrical Specifications: T = +25C (measured as single diodes) A Parameter & Test Conditions Units Min. Typ. Max. MA4E2037 Junction Capacitance 0 V, 1 MHz pF 0.020 1 Total Capacitance 0 V, 1 MHz pF 0.030 0.045 0.060 Junction Capacitance Difference pF 2 Series Resistance +10 mA 4.0 7.0 Forward Voltage +1 mA V 0.60 0.70 0.80 Forward Voltage Difference +1 mA V Reverse Voltage Breakdown -10 A V 4.5 7.0 MA4E2039 Junction Capacitance 0 V, 1 MHz pF 0.020 1 Total Capacitance 0 V, 1 MHz pF 0.030 0.045 0.060 Junction Capacitance Difference pF 0.005 0.010 2 Series Resistance +10 mA 4.0 7.0 Forward Voltage +1 mA V 0.60 0.70 0.80 Forward Voltage Difference +1 mA V 0.005 0.010 Reverse Voltage Breakdown -10 A V MA4E2040 3 Junction Capacitance 0 V, 1 MHz pF 0.020 1,3 Total Capacitance 0 V, 1 MHz pF 0.030 0.045 0.060 Junction Capacitance Difference pF 0.005 0.010 2 Series Resistance +10 mA 4.0 7.0 Forward Voltage +1 mA V 0.60 0.70 0.80 Forward Voltage Difference +1 mA V 0.005 0.010 Reverse Voltage Breakdown -10 A V 4.5 7.0 1. Total capacitance is equivalent to the sum of junction capacitance C and parasitic capacitance C . J P 2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 . 3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: