MA4GP907

MA4GP907 GaAs Flip Chip PIN Rev. V10 1,2 Features Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 ns Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS* Compliant Description The MA4GP907 is a Gallium Arsenide (GaAs) flip-chip PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device-to-device uniformity and produces extremely low parasitics. The diode exhibits an exceptionally low RC product (0.1 ps) and a 2 - 3 ns switching speed. The chips are fully passivated with silicon nitride and have an added BCB polymer layer for scratch protection. The BCB protective coating prevents damage to the diode junction and anode 1. Gold Pads 14 m thick (nominal). air-bridge during handling and assembly. 2. Yellow areas indicate ohmic gold mounting pads. The ultra low capacitance of the MA4GP907 allows Inches Millimeters for operation at millimeter wave frequencies for RF Dim. switches and phase shifter applications. The diode is Min. Max. Min. Max. designed to be used in pulsed or CW applications, A 0.0260 0.0270 0.6604 0.6858 where single digit ns switching speed is required. The low capacitance of this device makes it ideal for B 0.0135 0.0145 0.3429 0.3683 use in many microwave multi-throw switch assemblies, where the series capacitance of each C 0.0065 0.0075 0.1651 0.1905 off port adversely loads the input and affects VSWR. D 0.0043 0.0053 0.1092 0.1346 E 0.0068 0.0073 0.1727 0.1854 F 0.0182 0.0192 0.4623 0.4877 Ordering Information Part Number Packaging MA4GP907 Waffle Pack MADP-000907-13050P Pocket Tape * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4GP907 GaAs Flip Chip PIN Rev. V10 Electrical Specifications T = +25C A Parameter Conditions Units Min. Typ. Max. Total Capacitance (C ) -10 V,1 MHz pF 0.025 0.030 T Series Resistance (R ) +10 mA, 1 GHz 5.2 7.0 S Forward Voltage (V ) +10 mA V 1.33 1.45 F 3 Reverse Voltage Current (I ) V = -50 V A 10 R R 4 Switching Speed (T /T ) 10 GHz ns 2 RISE FALL 3. The max rated reverse voltage (V ) is sourced and the resultant reverse leakage current (I ), is measured to be <10 A. R R 4. Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series mounted diode, driver delay is not included. Absolute Maximum Ratings Circuit Pad Layout Parameter Absolute Maximum 0.013 Reverse Voltage 50 V CW Incident Power 23 dBm RF & DC 0.012 250 mW Dissipated Power (2) PL Operating Temperature -55C to +125C Storage Temperature -55C to +150C 0.008 (2) PL Junction Temperature +175C Mounting Temperature +280C for 10 seconds 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: