MADP-011029-14150 High Power PIN Diode Rev. V3 50 MHz - 12 GHz Features Functional Schematic 3 Terminal LPF Broadband Shunt Structure 50 MHz - 12 GHz Broadband Frequency >100 W Peak Power Handling < 0.1 dB Shunt Insertion Loss RF RF 6 OUT IN 1 > 25 dB Shunt Isolation < 20C/W Thermal Resistance Lead-Free 1.5 x 1.2 mm 6-lead TDFN Package 5 GND GND 2 RoHS* Compliant and 260C Reflow Compatible Description GND 4 GND 3 7 The MADP-011029 is a lead-free 1.5 x 1.2 mm TDFN surface mount plastic package that provides both low and high signal frequency operation from 50 MHz to 12 GHz. The higher breakdown voltage and lower thermal resistance of the PIN diode provides peak power handling in excess of 100 W. 3 Pin Configuration This device is ideally suitable for usage in higher incident power switches, phase shifters, attenuators, Pin No. Pin Name Description and limiter microwave circuits over a broad frequency where higher performance surface mount 1 RF RF Input IN diode assemblies are required. 2 GND Ground 3 GND Ground 1,2 Ordering Information 4 GND Ground Part Number Package 5 GND Ground 6 RF RF Output MADP-011029-14150T 3000 piece reel OUT 4 7 Paddle Ground MADP-011029-000SMB Sample board 3. MACOM recommends connecting unused package pins to 1. Reference Application Note M513 for reel size information. ground. 2. All RF Sample boards include 5 loose parts. 4. The exposed pad centered on the package bottom must be connected to RF, DC, and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MADP-011029-14150 High Power PIN Diode Rev. V3 50 MHz - 12 GHz Electrical Specifications: T = +25C A Parameter Test Conditions Units Min. Typ. Max. Forward Voltage + 50 mA DC V 0.7 0.9 1.1 Reverse Leakage Current -200 V DC nA - 20 -1000 5 Total Capacitance -50 V 1 GHz pF 0.31 0.40 6 Series Resistance +10 mA 1 GHz 1.5 1.9 6 Parallel Resistance -Vdc = -40 V, 100 MHz K 1000 +If = 10 mA / -Ir = -6 mA Minority Carrier Lifetime s 1.0 2.0 (50% Control Voltage, 90% Output Voltage) CW Thermal Resistance ( Infinite Heat Sink at Thermal I High = 4 A, I low = 10 mA 10 kHz C/W 20 Ground Plane) 7,8 Power Dissipation ( Infinite Heat Sink at Thermal +If = 50 mA 1 GHz W 7.5 Ground Plane) Insertion Loss F = 1 GHz, -Vdc = -10 V dB 0.1 Isolation F = 1 GHz, +I bias = +10 mA dB 23 25 5. Ct ( Total Capacitance ) = CJ ( Junction Capacitance ) + Cp ( Parasitic Package Capacitance ). 6. Rs and Rp are measured on an HP4291A Impedance Analyzer. 7. De-rate power dissipation linearly by -50 mW/C to 0 W +175C: Pd (T) = Pd (+25C) - P = Pd (+25) - (50 mV/C) (T). 8. PD = Tj / or PD=(IF + IRF) 2 (Rs), where IF is the forward bias DC current and IRF is the forward bias RMS RF current. 9,10 Absolute Maximum Ratings Parameter Absolute Maximum Handling Procedures DC Forward Voltage 1.2 V +250 mA Please observe the following precautions to avoid damage: DC Forward Current 250 mA DC Reverse Voltage -400 V Static Sensitivity Junction Temperature +175C These devices are sensitive to electrostatic discharge (ESD) and can be damaged by static Operating Temperature -65C to +125C electricity. Proper ESD control techniques should be used when handling these Class 1B devices. Storage Temperature -65C to +150C 9. Exceeding any one or combination of these limits may cause permanent damage to this device. 10. MACOM does not recommend sustained operation near these survivability limits. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: