MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor Production V1 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle 23 Aug 11 Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200C) Application Civilian and Military Pulsed Radar Product Description The MAGX-002731-100L00 is a gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors Typical RF Performance provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for todays demanding application needs. The MAGX-002731-100L00 is constructed using a thermally Freq. Gain Id-Pk Eff Pin Pout enhanced Cu/Mo/Cu flanged ceramic package which provides (W (W Peak) (MHz) (dB) (A) (%) excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load 2700 7 109 12 4.2 51 conditions unparalleled with older semiconductor technologies. 2900 7 112 12 4.4 51 3100 7 109 12 4.2 52 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as fol- lows: Vdd=50V, Idq=500mA (pulsed), F=2.73.1 GHz, Pulse=500us, Duty=10%. Ordering Information MAGX-002731-100L00 100W GaN Power Transistor MAGX-002731-SB2PPR Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology North America Tel: 800.366.2266 / Fax: 978.366.2266 Solutions is considering for development. Performance is based on target specifications, simu- Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 lated results, and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- product(s) or information contained herein without notice. able. Commitment to produce in volume is not guaranteed. MAGX-002731-100L00 GaN HEMT Pulsed Power Transistor Production V1 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle 23 Aug 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) +65V Supply Voltage (Vgg) -8 to 0V Supply Current (Id1) 7100 mA Pk Input Power (Pin) +34 dBm Absolute Max. Junction/Channel Temp 200 C Pulsed Power Dissipation (Pavg) at 85 C 128W Thermal Resistance, (Tchannel = 200 C) V = 50V, I = 500mA, Pout = 100W Peak DD DQ 0.9 C/W (300us Pulse / 10% Duty) Operating Temp -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile ESD Min. - Machine Model (MM) 50 V ESD Min. - Human Body Model (HBM) >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS V = -8V, V = 175V Drain-Source Leakage Current I - - 6 mA GS DS DS Gate Threshold Voltage V = 5V, I = 15.0mA V -5 -3 -2 V DS D GS (th) Forward Transconductance V = 5V, I = 3.5mA G 2.5 - - S DS D M DYNAMIC CHARACTERISTICS Input Capacitance Not applicableInput internally matched C N/A N/A N/A pF GS Output Capacitance V = 50V, V = -8V, F = 1MHz DS GS C - 30.3 35.4 pF DS Feedback Capacitance V = 50V, V = -8V, F = 1MHz DS GS C - 2.8 5.4 pF GD 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology North America Tel: 800.366.2266 / Fax: 978.366.2266 Solutions is considering for development. Performance is based on target specifications, simu- Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 lated results, and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail- product(s) or information contained herein without notice. able. Commitment to produce in volume is not guaranteed.