MSAT-P25 PIN Diode Attenuator Shunt Element Rev. V1 Features Low Distortion Harmonics 85 dBc Broadband performance, >10 GHz Low Insertion Loss & High Attenuation, 27 dB RoHS* Compliant Description A broadband, High Linearity medium power shunt 2012 PIN Attenuator element 1.9 x 1.1 mm DFN package. This device is designed for wireless Telecommunication infrastructure and test instrument applications. It is also suited for other applications in 0.1 ~ 10 GHz range. Electrical Specifications: T = +25C (measured on evaluation board) A Parameter Test Conditions Units Min. Typ. Max. Breakdown Voltage (V ) I = 10 A V 200 BR R Lifetime (L ) I = 10 m, I = 6 Ma, 10% / 90% ns 2000 3000 5000 T F R Minimum Series Resistance (R ) I = -100 mA, 500 MHz 1.5 2.5 S High Series Resistance (R ) I = -10 A, 500 MHz 1200 2200 3000 S I = -50 mA, 500 MHz 20 30 40 Low Series Resistance (R ) S I = -50 mA, <10 GHz 28 35 Absolute Maximum Ratings Parameter Absolute Maximum Forward Current (I ) 200 mA F Reverse Voltage (V ) 200 V R Thermal Resistance ( ) +20C/W JC Junction Temperature (T ) +175C J Storage Temperature (T ) -65C to +125C STG Assembly Temperature (T ) +260C SOLDER * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MSAT-P25 PIN Diode Attenuator Shunt Element Rev. V1 Performance Curves Attenuation vs. Current Isolation 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: