UF28100M RF Power MOSFET Transistor Rev. V1 100W, 100-500 MHz, 28V Features PACKAGE OUTLINE N-channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than competitive devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25 C Parameter Symbol Rating Units Drain-Source Voltage V 65 V DS Gate-Source Voltage V 20 V GS Drain-Source Current I 12* A DS Power Dissipation P 250 W D Junction Temperature T 200 C J Storage Temperature T -55 to +150 C STG Thermal Resistance 0.7 C/W JC TYPICAL DEVICE IMPEDANCES F (MHz) Z () Z () IN LOAD 100 4.5-j6.0 14.5+j0.5 300 2.25-j1.75 7.5j1.0 500 1.5+j5.5 3.5+j3.5 V =28V, I =600 Ma, P =100.0 W DD DQ OUT Z is the series equivalent input impedance of the device from gate to gate. IN Z is the optimum series equivalent load impedance as measured from drain to drain. LOAD ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol Min Max Units Test Conditions Drain-Source Breakdown Voltage BV 65 - V V = 0.0 V , I = 15.0 mA DSS GS DS Drain-Source Leakage Current I - 3.0 mA V = 28.0 V , V = 0.0 V DSS GS GS Gate-Source Leakage Current I - 3.0 A V = 20.0 V , V = 0.0 V GSS GS DS Gate Threshold Voltage V 2.0 6.0 V V = 10.0 V , I = 300.0 mA GS(TH) DS DS Forward Transconductance G 1.5 - S V = 10.0 V , I 3000.0 mA , V = 1.0V, 80 s Pulse M DS DS GS Input Capacitance C - 135 pF V = 28.0 V , F = 1.0 MHz ISS DS Output Capacitance - 90 pF V = 28.0 V , F = 1.0 MHz C DS OSS Reverse Capacitance C - 24 pF V = 28.0 V , F = 1.0 MHz RSS DS Power Gain G 10 - dB V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz P DD DQ OUT Drain Efficiency 50 - % V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz D DD DQ OUT Return Loss R 10 - dB V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz L DD DQ OUT Load Mismatch Tolerance VSWR-T - 30:1 - V = 28.0 V, I = 600.0 mA, P = 100.0 W F =500 MHz DD DQ OUT *Per side 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: UF28100M RF Power MOSFET Transistor Rev. V1 100W, 100-500 MHz, 28V Typical Broadband Performance Curves EFFICIENCY FREQUENCY POWER OUTPUT SUPPLY VOLTAGE VS VS P =10W I =600 mA (Push pull device) P =10 W I =600 mA F=500 MHz IN DD IN DQ 120 80 100 70 80 60 60 40 50 20 0 40 14 16 20 24 28 32 100 200 300 400 500 SUPPLY VOLTAGE (V) FREQUENCY (MHz) POWER OUTPUT POWER INPUT VS V =28 V I =600 mA (Push pull device) DD DQ 120 200MHz 400MHz 100 500MHz 80 300MHz 60 40 20 0 0 1 2 4 6 8 10 12 POWER INPUT (W) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: