2N3904

2N3904 SEME LAB GENERAL PURPOSE MECHANICAL DATA NPN TRANSISTOR Dimensions in mm (inches) FOR HIGH RELIABILITY APPLICATIONS 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES SILICON PLANAR EPITAXIAL NPN TRANSISTOR CECC SCREENING OPTIONS 0.48 (0.019) 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. 2.54 (0.100) Nom. 3 1 2 TO-18 METAL PACKAGE PIN 1 Emitter PIN 2 Base PIN 3 Collector ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) A V Collector Base Voltage 60V CBO V Collector Emitter Voltage 40V CEO V Emitter Base Voltage 6V EBO I Collector Current 200mA C P Total Device Dissipation T =25C 350mW D A Derate above 25C 3.33mW / C R Thermal Resistance Junction Ambient 300C/W JA q T , T Operating and Storage Temperature Range 55 to +175C STG J Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 7/00 E-mail: sales semelab.co.uk Website: 2N3904 SEME LAB ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit V Collector Emitter Breakdown Voltage I = 1mA I = 0 40 (BR)CEO* C B V Collector Base Breakdown Voltage I = 10mAI = 0 60 V (BR)CBO C E V Emitter Base Breakdown Voltage I = 10mAI = 0 6 (BR)EBO E C I Base Cut-off Current V = 30V 50 BL CE nA I Collector Emitter Cut-off Current V = 3V 50 CEX EB I = 10mA I = 1mA 0.2 C B V Collector Emitter Saturation Voltage V CE(sat) I = 50mA I = 5mA 0.3 C B I = 10mA I = 1mA 0.65 0.85 C B V Base Emitter Saturation Voltage V BE(sat)* I = 50mA I = 5mA 0.95 C B I = 0.1mA 40 C I = 1mA 70 C h DC Current Gain V = 1V I = 10mA 100 300 FE* CE C I = 50mA 60 C I = 100mA 30 C * Pulse Test: t 300ms, d 2%. p SMALL SIGNAL CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit V = 20V I = 10mA CE C f Current Gain Bandwidth Product 300 MHz t f = 100MHz V = 5V I = 0 CB E C Output Capacitance 4 pF ob f = 1MHz V = 0.5V I = 0 BE C C Input Capacitance 8 pF ib f = 1MHz h Input Impedance 110 kW ie V = 10V CE h Output Admittance 140 mhmos oe I = 1mA C -4 h Voltage Feedback Ratio 0.5 8 x 10 re f = 1kHz h Small Signal Current Gain 100 400 fe V = 5V I = 100mA CE C N Noise Figure 5 dB F f = 1kHz R = 1kW S SWITCHING CHARACTERISTICS (T = 25C unless otherwise stated) A Parameter Test Conditions Min. Typ. Max. Unit t Delay Time V = 3V V = 0.5V 35 d CC BE t Rise Time I = 10mA I = 1mA 35 r C B1 ns t Storage Time V = 3V V = 0.5V 200 s CC BE t Fall Time I = I = 1mA 50 f B1 B2 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Prelim. 7/00 E-mail: sales semelab.co.uk Website: