Product Information

2N3904

2N3904 electronic component of Central Semiconductor

Datasheet
Transistors Bipolar - BJT NPN Gen Pur SS

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4901 ea
Line Total: USD 0.49

151039 - Global Stock
Ships to you between
Wed. 01 May to Fri. 03 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
122376 - Global Stock


Ships to you between Wed. 01 May to Fri. 03 May

MOQ : 1
Multiples : 1

Stock Image

2N3904
Central Semiconductor

1 : USD 0.4082
10 : USD 0.2909
100 : USD 0.1322
1000 : USD 0.0966
2500 : USD 0.0932
10000 : USD 0.084
25000 : USD 0.0805
50000 : USD 0.077
100000 : USD 0.077

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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2N3903 2N3904 www.centralsemi.com DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3903 and 2N3904 types are NPN silicon transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N3905 and 2N3906. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 200 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C) 2N3903 2N3904 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V =30V, V=3.0V - 50 - 50 nA CEV CE EB BV I=10A 60 - 60 - V CBO C BV I=1.0mA 40 - 40 - V CEO C BV I=10A 6.0 - 6.0 - V EBO E V I =10mA, I=1.0mA - 0.2 - 0.2 V CE(SAT) C B V I =50mA, I=5.0mA - 0.3 - 0.3 V CE(SAT) C B V I =10mA, I=1.0mA 0.65 0.85 0.65 0.85 V BE(SAT) C B V I =50mA, I=5.0mA - 0.95 - 0.95 V BE(SAT) C B h V =1.0V, I=0.1mA 20 - 40 - FE CE C h V =1.0V, I=1.0mA 35 - 70 - FE CE C h V =1.0V, I=10mA 50 150 100 300 FE CE C h V =1.0V, I=50mA 30 - 60 - FE CE C h V =1.0V, I=100mA 15 - 30 - FE CE C h V =10V, I =1.0mA, f=1.0kHz 50 200 100 400 fe CE C f V =20V, I =10mA, f=100MHz 250 - 300 - MHz T CE C C V =5.0V, I =0, f=100kHz - 4.0 - 4.0 pF ob CB E C V =0.5V, I =0, f=100kHz - 8.0 - 8.0 pF ib EB C NF V =5.0V, I =100A, R=1.0k CE C S f=10Hz to 15.7kHz - 6.0 - 5.0 dB t V =3.0V, V =0.5V, I=10mA on CC BE(OFF) C I=1.0mA - 70 - 70 ns B1 t V =3.0V, I =10mA, I =I =1.0mA - 225 - 250 ns off CC C B1 B2 R2 (12-October 2011)2N3903 2N3904 NPN SILICON TRANSISTOR TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (12-October 2011) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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