Product Information

1090MP

1090MP electronic component of Microchip

Datasheet
RF Bipolar Transistors Avionics/Bipolar Transistor

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 115.7574 ea
Line Total: USD 115.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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1090MP
Microchip

1 : USD 155.2789
10 : USD 146.0865

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

1090MP
Microchip

1 : USD 115.7574
2 : USD 108.32
3 : USD 105.873
5 : USD 103.7555

0 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

1090MP
Microchip

1 : USD 155.2789
10 : USD 146.0865

     
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1090MP 90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed 55FW-1 systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. ABSOLUTE MAXIMUM RATINGS o 2 Maximum Power Dissipation 25 C 250 Watts Peak Maximum Voltage and Current BVces Collector to Emitter Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 6.5 Amps Peak Maximum Temperatures o Storage Temperature - 65 to +150 C o Operating Junction Temperature + 200 C ELECTRICAL CHARACTERISTICS 25 C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS P Power Out F= 1025-1150 MHz 90 W OUT P Power Input Vcc = 50 Volts 14 W IN P Power Gain 8.08 8.5 dB PW = 10 sec, DF = 1% G Efficiency 40 % c 1 VSWR Load Mismatch Tolerance F = 1090 MHz 20:1 FUNCTIONAL CHARACTERISTICS 25 C BVebo Emitter to Base Breakdown Ie = 1 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 10mA 65 V Hfe DC Current Gain Vce = 5V, Ic = 500 mA 15 120 Cob Output Capacitance Vcb = 50 V, f = 1 MHz 12 pF 1 o Thermal Resistance 0.6 C/W jc Note 1: At rated pulse conditions Rev B: Dec 2009 Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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