1214-110M
110 Watts - 50 Volts, 330 s, 10%
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
CASE OUTLINE
The 1214-110M is an internally matched, COMMON BASE transistor capable
55KT, STYLE 1
of providing 110 Watts of pulsed RF output power at 330 s pulse width, 10%
duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed
transistor is specifically designed for L-Band radar applications. It utilizes gold
metallization and diffused emitter ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
o
Maximum Power Dissipation @ 25 C 270 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 75 Volts
BVebo Emitter to Base Voltage 3.0 Volts
Ic Collector Current 8 Amps
Maximum Temperatures
o
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
O
ELECTRICAL CHARACTERISTICS @ 25 C
CHARACTERISTICS MIN TYP MAX UNITS
SYMBOL TEST CONDITIONS
Pout Power Out Freq = 1200 1400 MHz 110 170 Watts
Pg Power Gain 7.4 dB
Vcc = 50 Volts
c Collector Efficiency 50 55 %
Pin = 20 Watts
Input Return loss dB
Rl
10
Pulse Width = 330 s
Droop Droop 0.5 dB
Flatness Duty Factor = 10%
Flatness 1.25 dB
1
VSWR
Load Mismatch Tolerance
3:1
VSWRs
Load Mismatch - Stability
1.5:1
FUNCTIONAL CHARACTERISTICS @ 25C
Bvces Collector to Emitter Breakdown Ic = 100 mA 75 Volts
Ices Collector to Emitter Leakage Vce = 50 Volts 10 mA
o
1
Thermal Resistance Rated Pulse Condition 0.65 C/W
jc
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
1214-110M
Performance Curves
1214-110M 1214-110M
Pin vs. Pout Pin vs. Efficency
200 70.0
180
60.0
160
50.0
140
120
1200 MHz 40.0 1200 MHz
100 1300 MHz 1300 MHz
1400 Mhz 1400 MHz
30.0
80
60
20.0
40
10.0
20
0 0.0
0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 35
Pin (W) Pin (W)
1214-110M
Pin vs. Gain
12.0
10.0
8.0
1200 MHz
1300 MHz
6.0
1400 MHz
4.0
2.0
0.0
0 5 10 15 20 25 30 35
Pin (W)
Impedance Information
2
Frequencies (MHz)
Z ( ) )Z (
Source Load
1200 3.36-j3.12 4.97+j0.15
1300 3.5-j2.4 5.33-j2.86
1400 3.81-j1.3 2.88-j3.86
Note 2: Z exclusive of bias circuit
Load
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
Pout (W)
Gain (dB)
Efficency (%)