DATA SHEET SILICON TRANSISTOR JEITA Part No. NE68519 / 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is a proprietary fabrication technique. FEATURES Low Voltage Use. PACKAGE DIMENSIONS High fT : 12.0 GHz TYP. ( VCE = 3 V, IC = 10 mA, f = 2 GHz) in milimeters Low Cre : 0.4 pF TYP. ( VCE = 3 V, IE = 0, f = 1 MHz) 1.6 0.1 Low NF : 1.5 dB TYP. ( VCE = 3 V, IC = 3 mA, f = 2 GHz) 0.8 0.1 2 High S21e : 8.5 dB TYP. ( VCE = 3 V, IC = 10 mA, f = 2 GHz) 2 Ultra Super Mini Mold Package. ORDERING INFORMATION 3 1 PART QUANTITY PACKING STYLE NUMBER NE68519-A 50 pcs/Unit. Embossed tape 8 mm wide. 2SC5010-A Pin3(Collector) face to perforation side of the tape. NE68519-T1-A 3 kpcs/Reel. 2SC5010-T1-A * Please contact a sales representative, if you require evaluation 1. Emitter 2. Base sample. Unit sample quantity shall be 50 pcs. 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation PT 125 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Document No. P10389EJ2V0DS00 (2nd edition) (Previous No. TD-2401) Date Published July 1995 P PHASE-OUT 1.6 0.1 0.75 0.05 1.0 0.5 0.5 0.6 +0.1 0.2 0 0 to 0.1 +0.1 +0.1 0.15 0.3 0.05 02SC5010 NE68519 / ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 0.1 A VCB = 5 V, IE = 0 Emitter Cutoff Current IEBO 0.1 A VEB = 1 V, IC = 0 1 DC Current Gain hFE 75 150 VCE = 3 V, IC = 10 mA* Gain Bandwidth Product fT 12.0 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz 2 Feed-Back Capacitance Cre 0.4 0.7 pF VCE = 3 V, IE = 0 , f = 1 MHz* 2 Insertion Power Gain S21e 7.0 8.5 dB VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure NF 1.5 2.5 dB VCE = 3 V, IC = 3 mA, f = 2 GHz *1 Pulse Measurement PW 350 s, Duty Cycle 2 % *2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification Rank FB Marking 83 hFE 75 to 150 2 PHASE-OUT