MRF10120 MACOM

MRF10120 electronic component of MACOM Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MRF10120 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MRF10120 RF Bipolar Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No. MRF10120
Manufacturer: MACOM
Category: RF Bipolar Transistors
Description: Transistors RF Bipolar
Datasheet: MRF10120 Datasheet (PDF)
Price (USD)
1: USD 363.285 ea
Line Total: USD 363.28 
Availability : 0
  
QtyUnit Price
1$ 363.285

Availability 1
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 363.285

   
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Configuration
Brand
Cnhts
Hts Code
Mxhts
Product Type
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Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MRF10120 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MRF10120 and other electronic components in the RF Bipolar Transistors category and beyond.

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MRF10120 Microwave Long Pulse Power Silicon NPN Transistor Rev. V1 120W (peak), 960 1215MHz Product Image Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% tested for load mismatch at all phase angles with 3:1 VSWR Hermetically sealed industry standard package Silicon nitride passivated Gold metalized, emitter ballasted for long life and resistance to metal migration CASE 355C 02, STYLE 1 Internal input and output matching for broadband operation 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MRF10120 Microwave Long Pulse Power Silicon NPN Transistor Rev. V1 120W (peak), 960 1215MHz 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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