1N4782A Microchip

1N4782A electronic component of Microchip
1N4782A Microchip
1N4782A Zener Diodes
1N4782A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 1N4782A Zener Diodes across the USA, India, Europe, Australia, and various other global locations. 1N4782A Zener Diodes are a product manufactured by Microchip. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

Part No. 1N4782A
Manufacturer: Microchip
Category: Zener Diodes
Description: Zener Diodes Temperature Compensated
Datasheet: 1N4782A Datasheet (PDF)
Price (USD)
1: USD 140.4858 ea
Line Total: USD 140.49 
Availability : 0
  
QtyUnit Price
1$ 140.4858
25$ 84.294

Availability 0
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 140.4858
25$ 84.294

   
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We are delighted to provide the 1N4782A from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4782A and other electronic components in the Zener Diodes category and beyond.

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8.5 VOLT NOMINAL ZENER VOLTAGE + 5% 1N4775 thru TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4784A LOW CURRENT RANGE: 0.5 AND 1.0 mA METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C DC Power Dissipation: 500mW +50C Power Derating: 4 mW / C above +50C REVERSE LEAKAGE CURRENT l = 10 A 25C & V = 6 Vdc R R ELECTRICAL CHARACTERISTICS 25C, unless otherwise specied. JEDEC ZENER ZENER MAXIMUM VOLTAGE TEMPERATURE EFFECTIVE TYPE VOLTAGE TEST DYNAMIC TEMPERATURE RANGE TEMPERATURE NUMBER CURRENT IMPEDANCE STABILITY COEFFICIENT v I I Z V ZT z ZT ZT ZT (Note 3) (Note 1) (Note 2) VOLTS mA OHMS mV C % / C 1N4775 8.5 0.5 200 64 0 to + 75 0.01 FIGURE 1 1N4775A 8.5 0.5 200 132 -55 to +100 0.01 1N4776 8.5 0.5 200 32 0 to + 75 0.005 1N4776A 8.5 0.5 200 66 -55 to +100 0.005 1N4777 8.5 0.5 200 13 0 to + 75 0.002 1N4777A 8.5 0.5 200 26 -55 to +100 0.002 1N4778 8.5 0.5 200 6.4 0 to + 75 0.001 DESIGN DATA 1N4778A 8.5 0.5 200 13 -55 to +100 0.001 1N4779 8.5 0.5 200 3.2 0 to + 75 0.0005 1N4779A 8.5 0.5 200 6.6 -55 to +100 0.0005 1N4780 8.5 1.0 100 64 0 to + 75 0.01 CASE: Hermetically sealed glass 1N4780A 8.5 1.0 100 132 -55 to +100 0.01 case. DO 35 outline. 1N4781 8.5 1.0 100 32 0 to + 75 0.005 1N4781A 8.5 1.0 100 66 -55 to +100 0.005 1N4782 8.5 1.0 100 13 0 to + 75 0.002 LEAD MATERIAL: Copper clad steel. 1N4782A 8.5 1.0 100 26 -55 to +100 0.002 1N4783 8.5 1.0 100 6.4 0 to + 75 0.001 LEAD FINISH: Tin / Lead 1N4783A 8.5 1.0 100 13 -55 to +100 0.001 1N4784 8.5 1.0 100 3.2 0 to + 75 0.0005 1N4784A 8.5 1.0 100 6.6 -55 to +100 0.0005 POLARITY: Diode to be operated with the banded (cathode) end positive. NOTE 1 Zener impedance is derived by superimposing on l A 60Hz rms ZT a.c. current equal to 10% of l . MOUNTING POSITION: ANY. ZT NOTE 2 The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specied mV at any discrete temperature between the established limits, per JEDEC standard No.5. NOTE 3 Zener voltage range equals 8.5 volts + 5%. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: 1N4775 thru 1N4784A 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 T , Lead temperature (C) 3/8 from body L FIGURE 2 POWER DERATING CURVE +.0015 +.0010 +.0005 0 -.0005 -.0010 -.0015 0.5 1.0 1.5 2.0 OPERATING CURRENT l (mA) ZT FIGURE 4 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT 52 CHANGE IN TEMPERATURE COEFFICIENT ( %/C) Pd, Rated Power Dissipation (mW)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
ATM
Atmel
Atmel Wireless (VA)
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Vitesse / Microsemi
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