Product Information

23K256-I/ST

23K256-I/ST electronic component of Microchip

Datasheet
SRAM 256K 32K X 8 2.7V SERIAL SRAM IND

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2127 ea
Line Total: USD 1.2127

25 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

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23K256-I/ST
Microchip

1 : USD 1.2127

24 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

23K256-I/ST
Microchip

1 : USD 1.4932
25 : USD 1.4932

3 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

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23K256-I/ST
Microchip

1 : USD 1.5713
10 : USD 1.5448
30 : USD 1.5183
50 : USD 1.4918
100 : USD 1.4653

2840 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

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23K256-I/ST
Microchip

1 : USD 1.5295
25 : USD 1.472

96 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 22
Multiples : 1

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23K256-I/ST
Microchip

22 : USD 1.7456

25 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 5
Multiples : 1

Stock Image

23K256-I/ST
Microchip

5 : USD 1.2127

24 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 5
Multiples : 1

Stock Image

23K256-I/ST
Microchip

5 : USD 1.4932

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Memory Size
Organization
Access Time
Maximum Clock Frequency
Interface Type
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Supply Current - Max
Data Rate
Memory Type
Operating Temperature Range
Series
Type
Brand
Number Of Ports
Factory Pack Quantity :
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23A256/23K256 256K SPI Bus Low-Power Serial SRAM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 23K256 2.7-3.6V 32 Byte I P, SN, ST 23A256 1.7-1.95V 32 Byte I P, SN, ST Features: Description: Max. Clock 20 MHz The Microchip Technology Inc. 23X256 are 256 Kbit Serial SRAM devices. The memory is accessed via a Low-Power CMOS Technology: simple Serial Peripheral Interface (SPI) compatible - Read Current: 3 mA at 1 MHz serial bus. The bus signals required are a clock input - Standby Current: 4 A Max. at 3.6V (SCK) plus separate data in (SI) and data out (SO) 32,768 x 8-bit Organization lines. Access to the device is controlled through a Chip 32-Byte Page Select (CS) input. HOLD pin Communication to the device can be paused via the Flexible Operating modes: hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the - Byte read and write exception of Chip Select, allowing the host to service - Page mode (32 Byte Page) higher priority interrupts. - Sequential mode The 23X256 is available in standard packages Sequential Read/Write including 8-lead PDIP and SOIC, and advanced High Reliability packaging including 8-lead TSSOP. Temperature Ranges Supported: - Industrial (I): -40Cto +85C Package Types (not to scale) Pb-Free and RoHS Compliant, Halogen Free Pin Function Table Name Function CS Chip Select Input PDIP/SOIC/TSSOP SO Serial Data Output (P, SN, ST) VSS Ground SI Serial Data Input CS 1 8 VCC SCK Serial Clock Input SO 2 7 HOLD Hold Input HOLD NC 3 6 SCK VCC Supply Voltage VSS 4 5 SI 2009 Microchip Technology Inc. Preliminary DS22100C-page 123A256/23K256 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................4.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V Storage temperature .................................................................................................................................-40C to 125C Ambient temperature under bias.................................................................................................................-40C to 85C ESD protection on all pins...........................................................................................................................................2kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Param. (1) Sym. Characteristic Min. Typ Max. Units Test Conditions No. D001 VCC Supply voltage 1.7 1.95 V 23A256 D001 VCC Supply voltage 2.7 3.6 V 23K256 D002 VIH High-level input .7 VCC VCC V voltage +0.3 D003 VIL Low-level input -0.3 0.2xVCC V voltage D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC -0.5 V IOH = -400 A voltage D006 ILI Input leakage 0.5 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 0.5 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read CLK = 1 MHz SO = O 3 mA F 6 mA FCLK = 10 MHz SO = O Operating current 10 mA FCLK = 20 MHz SO = O D009 ICCS 200 500 nA CS = VCC = 1.8V, Inputs tied to VCC Standby current or VSS 1 4 A CS = VCC = 3.0V, Inputs tied to VCC or VSS D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) D011 VDR RAM data retention 1.2 V (2) voltage Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS22100C-page 2 Preliminary 2009 Microchip Technology Inc.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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