24C02C 2 2K 5.0V I C Serial EEPROM Features: Description: Single-Supply with Operation from 4.5V to 5.5V The Microchip Technology Inc. 24C02C is a 2K bit Serial Electrically Erasable PROM with a voltage range Low-Power CMOS Technology: of 4.5V to 5.5V. The device is organized as a single - Read current 1 mA, max. block of 256x8-bit memory with a 2-wire serial - Standby current 5 A, max. interface. Low-current design permits operation with 2 2-Wire Serial Interface, I C Compatible max. standby and active currents of only 5 A and 1 Cascadable up to Eight Devices mA, respectively. The device has a page write capabil- ity for up to 16 bytes of data and has fast write cycle Schmitt Trigger Inputs for Noise Suppression times of only 1 ms for both byte and page writes. Output Slope Control to Eliminate Ground Bounce Functional address lines allow the connection of up to 100 kHz and 400 kHz Clock Compatibility eight 24C02C devices on the same bus for up to 16K Fast Page or Byte Write Time 1 ms, typical bits of contiguous EEPROM memory. The device is Self-Timed Erase/Write Cycle available in the standard 8-pin PDIP, 8-pin SOIC (3.90 16-Byte Page Write Buffer mm), 8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP packages. Hardware Write-Protect for Upper Half of the Array (80h-FFh) Block Diagram ESD Protection >4,000V More than 1 Million Erase/Write Cycles WP Data Retention >200 Years A0 A1 A2 HV Generator Factory Programming Available Packages Include 8-lead PDIP, SOIC, TSSOP, I/O Memory DFN, TDFN and MSOP Control Control EEPROM Logic Pb-Free and RoHS Compliant Logic XDEC Array Temperature ranges: - Industrial (I): -40C to +85C SDA SCL - Automotive (E): -40C to +125C Write-Protect Circuitry Vcc YDEC Vss Sense Amp. R/W Control Package Types PDIP, MSOP SOIC, TSSOP DFN/TDFN 1 A0 8 VCC A0 1 8 VCC 1 8 A0 VCC 7 WP A1 2 A1 2 7 WP 2 7 A1 WP 6 SCL A2 3 A2 3 6 SCL 3 6 VSS 4 5 A2 SDA SCL VSS 4 5 SDA 4 5 VSS SDA 2008 Microchip Technology Inc. DS21202J-page 124C02C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins .................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS Industrial (I): VCC = +4.5V to 5.5V TA = -40C to +85C Automotive (E): VCC = +4.5V to 5.5V TA = -40C to +125C Param. Sym. Characteristic Min. Max. Units Conditions No. D1 A0, A1, A2, SCL, SDA and WP pins: D2 VIH High-level input voltage 0.7 VCC V D3 VIL Low-level input voltage 0.3 VCC V D4 VHYS Hysteresis of Schmitt 0.05 VCC V (Note) Trigger inputs (SDA, SCL pins) D5 VOL Low-level output voltage 0.40 V IOL = 3.0 ma VCC = 4.5V D6 ILI Input leakage current 1 AVIN = VSS or VCC, WP = VSS D7 ILO Output leakage current 1 AVOUT = VSS or VCC D8 CIN, Pin capacitance 10 pFVCC = 5.0V (Note) COUT (all inputs/outputs) TA = 25C, f = 1 MHz D9 ICC Read Operating current 1 mA VCC = 5.5V, SCL = 400 kHz ICC Write 3 mA VCC = 5.5V D10 ICCS Standby current 5 AVCC = 5.5VSCL = SDA = VCC WP = VSS Note: This parameter is periodically sampled and not 100% tested. DS21202J-page 2 2008 Microchip Technology Inc.