Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure Low power drive requirement and Supertexs well-proven silicon-gate manufacturing Ease of paralleling process. This combination produces a device with the Low C and fast switching speeds ISS power handling capabilities of bipolar transistors, and the Excellent thermal stability high input impedance and positive temperature coefcient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS High input impedance and high gain structures, this device is free from thermal runaway and Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Motor controls wide range of switching and amplifying applications where Converters very low threshold voltage, high breakdown voltage, high Ampliers input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information R I DS(ON) D(ON) BV /BV DSS DGS Device Package Option (max) (min) (V) () (A) 2N6661 TO-39 90 4.0 1.5 Package is RoHS compliant (Green) Pin Conguration GATE SOURCE Absolute Maximum Ratings Parameter Value DRAIN TO-39 Drain-to-source voltage BV DSS (Case : Drain) Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V Operating and storage temperature -55C to +150C YY = Year Sealed * 2 N 6 6 6 1 Soldering temperature +300C WW = Week Sealed Y Y W W Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All Package may or may not include the following marks: Si or voltages are referenced to device ground. TO-39 * Distance of 1.6mm from case for 10 seconds. Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com2N6661 Thermal Characteristics I Power Dissipation I D D I I jc ja DR DRM O Package (pulsed) (continuous) T = 25 C C O O (A) ( C/W) ( C/W) (mA) (A) (mA) (W) TO-39 350 3.0 6.25 20 125 350 3.0 I (continuous) is limited by max rated T. D j Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 90 - - V V = 0V, I = 10A DSS GS D V Gate threshold voltage 0.8 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D O V V change with temperature - -3.8 -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 V = 0V, V = Max rating GS DS I Zero gate voltage drain current A V = 0.8 Max Rating, DSS DS - - 500 O V = 0V, T = 125 C GS A I On-state drain current 1.5 - - A V = 10V, V = 10V D(ON) GS DS - - 5.0 V = 5.0V, I = 0.3A Static drain-to-source GS D R DS(ON) on-state resistance - - 4.0 V = 10V, I = 1.0A GS D G Forward transconductance 170 - - mmho V = 25V, I = 0.5A FS DS D C Input capacitance - - 50 ISS V = 0V, GS C Common source output capacitance - - 40 pF V = 24V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 10 RSS t Turn-on time - - 10 (ON) V = 25V, I = 1.0A, DD D ns R = 25 t Turn-off time - - 10 GEN (OFF) V Diode forward voltage drop - 1.2 - V V = 0V, I = 1.0A SD GS SD t Reverse recovery time - 350 - ns V = 0V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT Pulse Generator 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2