Product Information

2N7000-G

Product Image X-ON

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 0.2A; TO92
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1133 ea
Line Total: USD 1.1133

1212 - Global Stock
Ships to you between
Fri. 16 Jun to Thu. 22 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
428 - Global Stock


Ships to you between Fri. 16 Jun to Thu. 22 Jun

MOQ : 1
Multiples : 1

Stock Image

2N7000-G
Microchip

1 : USD 0.446
25 : USD 0.446
100 : USD 0.446

6 - Global Stock


Ships to you between
Fri. 23 Jun to Wed. 28 Jun

MOQ : 1
Multiples : 1

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2N7000-G
Microchip

1 : USD 1.5486
10 : USD 1.321
30 : USD 1.1942
100 : USD 1.0525
500 : USD 0.9452
1000 : USD 0.915

1205 - Global Stock


Ships to you between Fri. 16 Jun to Thu. 22 Jun

MOQ : 1
Multiples : 1

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2N7000-G
Microchip

1 : USD 1.079
3 : USD 0.546
10 : USD 0.507
35 : USD 0.455
94 : USD 0.429

500 - Global Stock


Ships to you between Fri. 16 Jun to Thu. 22 Jun

MOQ : 22
Multiples : 1

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2N7000-G
Microchip

22 : USD 0.446

Read More Specifications

     
Manufacturer
Microchip
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
200 mA
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
5 Ohms
Transistor Polarity
N - Channel
Vgs th - Gate-Source Threshold Voltage
800 mV
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1 W
Mounting Style
Through Hole
Package / Case
TO - 92
Packaging
Bulk
Technology
Si
Number of Channels
1 Channel
Vgs - Gate-Source Voltage
10 V
Channel Mode
Enhancement
Configuration
Single
Brand
Microchip
Continuous Drain Current
200 mA
Drain-Source Breakdown Voltage
60 V
Gate-Source Breakdown Voltage
+/- 30 V
Power Dissipation
1 W
Rds On
5 Ohms
Factory Pack Quantity :
1000
Height
5.33 mm
Length
5.21 mm
Transistor Type
1 N - Channel
Width
4.19 mm
Forward Transconductance - Min
100 Mmho
Cnhts
8541210000
Hts Code
8541210095
Mxhts
85412101
Product Type
Mosfet
Subcategory
Mosfets
Taric
8541210000
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Additional Infomation About Product

The 2N7000-G is a N-MOSFET transistor manufactured by Microchip. It is a unipolar, three-terminal, field-effect transistor that operates with a supply voltage between 0 and 60V and provides 0.2A of drain current. The device is packaged in a TO92 package and is designed for use in amplifying or switching circuits.

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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