SD1127 RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS Features 175 MHz 12.5 VOLTS P = 4.0 W MINIMUM OUT G = 12.0 dB P 1. Collector 2. Base GROUNDED EMITTER 3. Emitter TO-39 DESCRIPTION: The SD1127 is a epitaxial silicon NPN transistor designed primarily for VHF mobile communications. The chip of this transistor is mounted on a beryllia pill to isolate the collector lead and ground the emitter lead for high gain performance ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol Parameter Value Unit V Collector-Base Voltage 36 V CBO V Collector-Emitter Voltage 18 V CEO V Collector-Emitter Voltage 36 V CES VEBO Emitter Base Voltage 4.0 V IC Collector Current .64 A Ptot Total Power Dissipation 8.0 W T Storage Temperature -65 + 200 C STG T Junction Temperature +200 C J Thermal Data R Junction-case Thermal Resistance 21.9 C/W T H(J-C) SD1127 RevB 2/06 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website atWWW.ADVANCEDPOWER.COM or contact our factory direct.SD1127 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BV I= 5 mA V = 0 36 --- --- V CES C BE BV I = 10 mA I = 0 18 --- --- V CEO C B BV I = 1 mA I = 0 4.0 --- --- V EBO E C I V = 15.0 V I = 0 --- --- .25 mA CBO CB E H V = 5.0 V I = 50 mA 10 --- 100 --- FE CE C DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit P f =175 MHz V =12.5 V 4.0 --- --- W OUT CE G f =175 MHz V =12.5 V 12.0 --- --- dB PE CE Cob f =1 MHz V =15.0 V --- --- 20.0 pf CE IMPEDANCE DATA FREQ Z () Z () IN CL 136 MHz 3.0 j3.8 12.8 j11 155 MHz 4.0 j2.0 11 j14.8 175 MHz 4.3 j5.8 13 j20 P = 0.2W IN V = 12.6V CC SD1127 RevB 2/06 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website atWWW.ADVANCEDPOWER.COM or contact our factory direct.